MRF6V3090NBR1 Freescale Semiconductor, MRF6V3090NBR1 Datasheet - Page 6

• Manufacturer Part Number: MRF6V3090NBR1
• Description: FET RF N-CH 860MHZ 50V TO272-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF6V3090NBR1

• Transistor Type: N-Channel
• Frequency: 860MHz
• Gain: 22dB
• Voltage - Rated: 110V
• Current - Test: 350mA
• Voltage - Test: 50V
• Power - Output: 18W
• Package / Case: TO-272BB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

6
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
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23.5
22.5
21.5
20.5
23
22
21
20
1
1
Figure 9. Intermodulation Distortion Products
350 mA
300 mA
250 mA
I
DQ
V
f2 = 860 MHz, Two--Tone Measurements
DD
Figure 11. Two- -Tone Power Gain versus
= 450 mA
= 50 Vdc, I
P
P
out
out
V
Two--Tone Measurements, 6 MHz Tone Spacing
versus Output Power
DQ
, OUTPUT POWER (WATTS) PEP
DD
, OUTPUT POWER (WATTS) PEP
= 350 mA, f1 = 854 MHz
= 50 Vdc, f1 = 854 MHz, f2 = 860 MHz
Output Power
10
10
3rd Order
5th Order
TYPICAL CHARACTERISTICS — TWO- -TONE
7th Order
100
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--50
--60
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--25
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--35
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--45
--50
--55
--60
--65
1
1
350 mA
I
V
Two--Tone Measurements, 6 MHz Tone Spacing
DQ
DD
V
Two--Tone Measurements
DD
= 250 mA
Figure 12. Third Order Intermodulation
= 50 Vdc, f1 = 854 MHz, f2 = 860 MHz
Figure 10. Intermodulation Distortion
= 50 Vdc, P
Distortion versus Output Power
300 mA
Products versus Tone Spacing
P
out
, OUTPUT POWER (WATTS) PEP
TWO--TONE SPACING (MHz)
out
= 90 W (PEP), I
450 mA
10
10
3rd Order
5th Order
7th Order
DQ
Freescale Semiconductor
= 350 mA
RF Device Data
100
90