PK30N512VMD100 Freescale Semiconductor, PK30N512VMD100 Datasheet - Page 33

• Manufacturer Part Number: PK30N512VMD100
• Description: IC ARM CORTEX MCU 512K 144-MAP
• Manufacturer: Freescale Semiconductor
• Series: Kinetisr

Specifications of PK30N512VMD100

• Core Processor: ARM Cortex-M4
• Core Size: 32-Bit
• Speed: 100MHz
• Connectivity: CAN, EBI/EMI, I²C, IrDA, SDHC, SPI, UART/USART
• Peripherals: DMA, I²S, LCD, LVD, POR, PWM, WDT
• Number Of I /o: 102
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 128K x 8
• Voltage - Supply (vcc/vdd): 1.71 V ~ 3.6 V
• Data Converters: A/D 37x16b, D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 144-LBGA
• Processor Series: Kinetis
• Core: ARM Cortex M4
• Data Ram Size: 128 KB
• Interface Type: UART, SPI, I2C, I2S, CAN
• Maximum Clock Frequency: 100 MHz
• Number Of Programmable I/os: 102
• Operating Supply Voltage: 1.71 V to 3.6 V
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the
FTFL to obtain an effective endurance increase for the EEPROM data. The built-in
EEPROM record management system raises the number of program/erase cycles that can
be attained prior to device wear-out by cycling the EEPROM data through a larger
EEPROM NVM storage space.
While different partitions of the FlexNVM are available, the intention is that a single
choice for the FlexNVM partition code and EEPROM data set size is used throughout the
entire lifetime of a given application. The EEPROM endurance equation and graph
shown below assume that only one configuration is ever used.
Writes_subsystem =
where
Freescale Semiconductor, Inc.
• Writes_subsystem — minimum number of writes to each FlexRAM location for
• EEPROM — allocated FlexNVM for each EEPROM subsystem based on DEPART;
• EEESPLIT — FlexRAM split factor for subsystem; entered with the Program
• EEESIZE — allocated FlexRAM based on DEPART; entered with Program Partition
• Write_efficiency —
• n
subsystem (each subsystem can have different endurance)
entered with Program Partition command
Partition command
command
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• 0.25 for 8-bit writes to FlexRAM
• 0.50 for 16-bit or 32-bit writes to FlexRAM
— data flash cycling endurance
EEPROM – 2 × EEESPLIT × EEESIZE
K30 Sub-Family Data Sheet Data Sheet, Rev. 4, 3/2011.
EEESPLIT × EEESIZE
Preliminary
Peripheral operating requirements and behaviors
× Write_efficiency × n
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