BPV11 Vishay, BPV11 Datasheet
BPV11
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BPV11 Summary of contents
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... BPV11 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant DESCRIPTION BPV11 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1¾ plastic package with base terminal sensitive to visible and near infrared radiation. PRODUCT SUMMARY COMPONENT BPV11 Note Test condition see table “Basic Characteristics” ...
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... V CEsat 100 Ω mA 100 Ω mA off = 100 Ω mA 100 80 94 8239 Fig Relative Collector Current vs. Ambient Temperature BPV11 Vishay Semiconductors MIN. TYP. MAX 450 ± 15 850 450 to 1080 130 300 6 5 110 2 mW/cm e λ = 950 nm 1.4 1.2 1.0 0.8 ...
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... BPV11 Vishay Semiconductors 100 λ = 950 nm 0.1 0.01 0.01 0 Irradiance (mW/cm²) 94 8244 e Fig Collector Light Current vs. Irradiance 100 λ = 950 mW/ 0.5 mW/cm 0.2 mW/cm 0.1 mW/cm 1 0.05 mW/cm 0.02 mW/cm 0.1 0 Collector Emitter Voltage (V) 94 8272 CE Fig Collector Light Current vs. Collector Emitter Voltage ...
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... Fig Relative Radiant Sensitivity vs. Angular Displacement 0.2 0.8 - 0.1 Chip position ± 0. 0.2 0.8 - 0.1 + 0.2 0.5 - 0.1 2.54 nom. BPV11 Vishay Semiconductors 0° 10° 20° 30° 40° 50° 60° 70° 80° 0.4 0.2 0.6 0 Area not plane + 0.15 0.5 technical drawings 1 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...