BPV11 Vishay, BPV11 Datasheet
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BPV11
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BPV11 Summary of contents
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... BPV11 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant DESCRIPTION BPV11 is a silicon NPN phototransistor with high radiant sensitivity in clear, T-1¾ plastic package with base terminal sensitive to visible and near infrared radiation. PRODUCT SUMMARY COMPONENT BPV11 Note Test condition see table “Basic Characteristics” ...
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... V CEsat 100 Ω mA 100 Ω mA off = 100 Ω mA 100 80 94 8239 Fig Relative Collector Current vs. Ambient Temperature BPV11 Vishay Semiconductors MIN. TYP. MAX 450 ± 15 850 450 to 1080 130 300 6 5 110 2 mW/cm e λ = 950 nm 1.4 1.2 1.0 0.8 ...
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... BPV11 Vishay Semiconductors 100 λ = 950 nm 0.1 0.01 0.01 0 Irradiance (mW/cm²) 94 8244 e Fig Collector Light Current vs. Irradiance 100 λ = 950 mW/ 0.5 mW/cm 0.2 mW/cm 0.1 mW/cm 1 0.05 mW/cm 0.02 mW/cm 0.1 0 Collector Emitter Voltage (V) 94 8272 CE Fig Collector Light Current vs. Collector Emitter Voltage ...
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... Fig Relative Radiant Sensitivity vs. Angular Displacement 0.2 0.8 - 0.1 Chip position ± 0. 0.2 0.8 - 0.1 + 0.2 0.5 - 0.1 2.54 nom. BPV11 Vishay Semiconductors 0° 10° 20° 30° 40° 50° 60° 70° 80° 0.4 0.2 0.6 0 Area not plane + 0.15 0.5 technical drawings 1 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...