BPX 43-3/4 OSRAM Opto Semiconductors Inc, BPX 43-3/4 Datasheet - Page 20

• Manufacturer Part Number: BPX 43-3/4
• Description: Photodetector Transistors PHOTODIODE
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 43-3/4

• Maximum Power Dissipation: 220 mW
• Maximum Dark Current: 20 nA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: TO-18
• Voltage - Collector Emitter Breakdown (max): 50V
• Current - Collector (ic) (max): 50mA
• Current - Dark (id) (max): 300nA
• Wavelength: 880nm
• Viewing Angle: 30°
• Power - Max: 220mW
• Mounting Type: Through Hole
• Orientation: Top View
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 50V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.22/0.24V
• Dark Current (max): 100nA
• Light Current: 6000/9500uA
• Rise Time: 12000/15000ns
• Fall Time: 12000/15000ns
• Power Dissipation: 220mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 30deg
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-18
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P3581

For more detailed product information and technical datasheets, please visit
Infrared Components Technical Data Silicon Photodetectors
126
DIL
Sidelooker
Photodiodes
PIN Photodiodes with daylight blocking filter matched for 950 nm IRED
Package
Infrared Components
Silicon Photodetectors
Type
BP 104 F
BPW 34 F
SFH 205 F
http://catalog.osram-os.com
Half
angle
φ
±
[°]
± 60
± 60
± 60
Radiant
sensitive
area typ.
[mm
4.84
7.02
7.02
2
]
I
[μA]
34 (≥
25)
50 (≥
40)
60 (≥
45)
P
For more detailed product information and technical datasheets, please visit http://catalog.osram-os.com
Measurement
cond.
λ = 950 nm,
E
cm
λ = 950 nm,
E
cm
λ = 950 nm,
E
cm
e
e
e
= 1 mW/
= 1 mW/
= 1 mW/
2
2
2
, V
, V
, V
R
R
R
= 5 V
= 5 V
= 5 V
I
[nA]
2 (≤ 30) V
2 (≤ 30) V
2 (≤ 30) V
R
Measure-
ment cond.
R
R
R
= 10 V
= 10 V
= 10 V
λ
typ.
[nm]
800 ...
1100
780 ...
1100
800 ...
1100
10%
t
typ
[μs]
0.02
0.02
0.02
r
, t
f
Measure-
ment cond.
V
R
λ = 850
nm
V
R
λ = 850
nm
V
R
λ = 850
nm
R
R
R
L
L
L
= 5 V,
= 50 Ω,
= 5 V,
= 50 Ω,
= 5 V,
= 50 Ω,
Ordering Code
Q62702P0084
Q62702P0929
Q62702P0102
Technical Data
Package
Fig.
41
41
43