BPX 43-3/4 OSRAM Opto Semiconductors Inc, BPX 43-3/4 Datasheet - Page 64

Photodetector Transistors PHOTODIODE

BPX 43-3/4

Manufacturer Part Number
BPX 43-3/4
Description
Photodetector Transistors PHOTODIODE
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Chipr
Datasheets

Specifications of BPX 43-3/4

Maximum Power Dissipation
220 mW
Maximum Dark Current
20 nA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Package / Case
TO-18
Voltage - Collector Emitter Breakdown (max)
50V
Current - Collector (ic) (max)
50mA
Current - Dark (id) (max)
300nA
Wavelength
880nm
Viewing Angle
30°
Power - Max
220mW
Mounting Type
Through Hole
Orientation
Top View
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
50V
Collector Current (dc) (max)
50mA
Collector-emitter Sat Volt (max)
0.22/0.24V
Dark Current (max)
100nA
Light Current
6000/9500uA
Rise Time
12000/15000ns
Fall Time
12000/15000ns
Power Dissipation
220mW
Peak Wavelength
880nm
Half-intensity Angle
30deg
Operating Temp Range
-40C to 125C
Operating Temperature Classification
Automotive
Mounting
Through Hole
Pin Count
3
Package Type
TO-18
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q62702P3581
Dimensions in mm (inch)
170
Infrared Components
Cathode
Figure 103:
1.8 (0.071)
1.2 (0.047)
SFH 4512
29.0 (1.142)
27.0 (1.063)
Area not flat
9.0 (0.354)
8.2 (0.323)
7.8 (0.307)
7.5 (0.295)
For more detailed product information and technical datasheets, please visit http://catalog.osram-os.com
0.6 (0.024)
0.4 (0.016)
5.9 (0.232)
5.5 (0.217)
GEXY6713
Figure 104:
SFH 4547, SFH 4557
Outline Drawings

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