RPM-22PB Rohm Semiconductor, RPM-22PB Datasheet - Page 2

• Manufacturer Part Number: RPM-22PB
• Description: Photodetector Transistors PHOTO SIDE VIEW RESIN
• Manufacturer: Rohm Semiconductor
• Type: Chipr

Specifications of RPM-22PB

• Maximum Power Dissipation: 150 mW
• Maximum Dark Current: 500 nA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Voltage - Collector Emitter Breakdown (max): 32V
• Current - Collector (ic) (max): 30mA
• Current - Dark (id) (max): 500nA
• Wavelength: 800nm
• Viewing Angle: 64°
• Power - Max: 150mW
• Mounting Type: Through Hole
• Orientation: Side View
• Package / Case: Radial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical and optical characteristic curves
○
RPM-22PB
c
www.rohm.com
1000
1000
100
100
2010 ROHM Co., Ltd. All rights reserved.
10
0.1
10
4
3
2
1
1
0
1
0.1
V
CE
−25
=5V
AMBIENT TEMPERATURE : Ta (°C)
COLLECTOR CURRENT : I
Fig.1 Collector current vs.
Fig.4 Dark current vs.
Fig.7 Response time vs.
250
ILLUMINANCE : E (
0
emitting strength
collector current
ambient temperature
1
500
25
750
50
10
Lx)
V
V
V
CE
CE
CE
1000
R
R
R
C
=10V
=20V
=30V
L
L
L
Ta=25°C
V
=1kΩ
=500Ω
=100Ω
(mA)
75
CC
=10V
1250
100
100
100
80
60
40
20
0.8
0.4
2.4
2.0
1.6
1.2
0
400
90°
0
80°
0
100
70°
COLLECTOR-EMITTER VOLTAGE : V
500
Fig.2 Output characteristics
OPTICAL WAVELENGTH : λ (
60°
Fig.5 Spectral sensitivity
RELATIVE LUMINOUS INTENSITY (%)
50°
4
600
80
40°
2/2
700
60
8
800
30°
Ee=0.4mW/cm
Ee=0.3mW/cm
Ee=0.2mW/cm
Ee=0.1mW/cm
40
12
900
20°
Fig.8 Directional pattern
1000 1100
nm)
20
10°
CE
2
2
2
2
16
(V)
0
0°
ANGULAR DISPLACEMENT (
10°
20° 30° 40° 50° 60° 70° 80° 90°
500
200
100
120
100
50
20
10
80
60
40
20
0
−25
Fig.6 Collector dissipation vs.
−25
AMBIENT TEMPERATURE : Ta (°C)
AMBIENT TEMPERATURE : Ta (°C)
Fig.3 Relative output vs.
deg)
0
ambient temperature
0
ambient temperature
2010.06 - Rev.A
100
80
60
40
20
25
25
Data Sheet
50
50
75
75
100
100