EL-PT958-8C Everlight Electronics CO., LTD, EL-PT958-8C Datasheet - Page 5

• Manufacturer Part Number: EL-PT958-8C
• Description: Photodetector Transistors PHOTO TRANSISTOR 1.6mm, 400-1200nm
• Manufacturer: Everlight Electronics CO., LTD

Specifications of EL-PT958-8C

• Maximum Power Dissipation: 75 mW
• Collector- Emitter Voltage Vceo Max: 35 V
• Collector-emitter Saturation Voltage: 0.4 V
• Fall Time: 15 us
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 25 C
• Product: Phototransistor
• Rise Time: 15 us
• Wavelength: 860 nm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: PT958-8C

MODEL NO:
Test Method
Ranks
Supplement
1.Parts
EVERLIGHT
(1) Chip
(2) Material
Parameter
C:\Data sheet\PT\PT958-8C.doc
7-3
7-2
7-1
6-2
6-1
Material
Symbol
Ic(on)
Ic(on)
Ic(on)
Ic(on)
Ic(on)
Type
Type
PT
PT958-8C
0.52
0.87
1.22
1.56
1.74
Min
Device Number:
EVERLIGHT ELECTRONICS CO., LTD.
Lead frame
SPCC
Typ
---
---
---
---
---
Material
Silicon
1.22
1.74
2.26
3.04
3.48
Max
ECN:
Wire
Gold
DPT-958-093
mA
mA
mA
mA
mA
Unit
Peak Wavelength
Ee=0.555mw/cm
Ee=0.555mw/cm
Ee=0.555mw/cm
Ee=0.555mw/cm
Ee=0.555mw/cm
860nm
Test Condition
Package
Epoxy
2
2
2
2
2
Vce=5V
Vce=5V
Vce=5V
Vce=5V
Vce=5V
REV:
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