EL-PT958-8C Everlight Electronics CO., LTD, EL-PT958-8C Datasheet - Page 7

Photodetector Transistors PHOTO TRANSISTOR 1.6mm, 400-1200nm

EL-PT958-8C

Manufacturer Part Number
EL-PT958-8C
Description
Photodetector Transistors PHOTO TRANSISTOR 1.6mm, 400-1200nm
Manufacturer
Everlight Electronics CO., LTD
Datasheet

Specifications of EL-PT958-8C

Maximum Power Dissipation
75 mW
Collector- Emitter Voltage Vceo Max
35 V
Collector-emitter Saturation Voltage
0.4 V
Fall Time
15 us
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 25 C
Product
Phototransistor
Rise Time
15 us
Wavelength
860 nm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
PT958-8C
MODEL NO:
Packing Specifications
Packing Quantity Specification
1.1000Pcs/1Bag
2.10Bags/1Box
3.10Boxes/1Carton
EVERLIGHT
2.Box
1.Bag
3.Carton
Label
C:\Data sheet\PT\PT958-8C.doc
3.5
4.5
15± 0.5
4.0 5.5
15
E
V
E
R
L
24
I
Opto-electronic,Compoments
Label
G
Label
EVERLIGHT
PT958-8C
H
UNIT:cm
T
Device Number:
EVERLIGHT ELECTRONICS CO., LTD.
CPN
LOT NO:
MADE IN TAIWAN:
P/N:
QTY:
CAT:
HUE:
REF:
ECN:
: Customer’s product number
Product number
DPT-958-093
Reference
Ranks
Packing quantity
Reference
Lot number
Production place
REV:
Page:
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