TEMT1020 Vishay, TEMT1020 Datasheet - Page 3

• Manufacturer Part Number: TEMT1020
• Description: Photodetector Transistors NPN Phototransistor
• Manufacturer: Vishay
• Type: IR Chipr

Specifications of TEMT1020

• Maximum Power Dissipation: 100 mW
• Maximum Dark Current: 200 nA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Package / Case: SMD
• Transistor Polarity: NPN
• Wavelength Typ: 880nm
• Power Consumption: 100mW
• Viewing Angle: 15°
• No. Of Pins: 2
• Msl: MSL 2 - 1 Year
• Light Current: 7.0mA
• Dark Current: 200nA
• C-e Breakdown Voltage: 70V
• Voltage - Collector Emitter Breakdown (max): 70V
• Current - Collector (ic) (max): 50mA
• Current - Dark (id) (max): 200nA
• Wavelength: 950nm
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Orientation: Top View
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number 81554
Rev. 1.5, 28-Nov-06
Figure 4. Turn On/Turn Off Time vs. Collector Current
94 8294
Figure 3. Collector Emitter Capacitance vs.
10
94 8293
8
6
4
2
0
8
6
4
2
0
0.1
0
Collector Emitter Voltage
V
2
CE
- Collector Emitter Voltage (V)
I
C
- Collector Current (mA)
4
1
6
f = 1 MHz
R
λ
V
L
CE
8
= 950 nm
= 100 W
= 5 V
10
10
t
on
t
off
12
100
14
TEMT1000/1020/1030/1040
Figure 5. Relative Radiant Sensitivity vs. Angular Displacement
94 8248
1.0
0.9
0.8
0.7
0.6
0.4
Vishay Semiconductors
0.2
0
0°
0.2
10°
0.4
20°
www.vishay.com
0.6
30°
40°
50°
60°
70°
80°
3