TEMT1020 Vishay, TEMT1020 Datasheet - Page 7

• Manufacturer Part Number: TEMT1020
• Description: Photodetector Transistors NPN Phototransistor
• Manufacturer: Vishay
• Type: IR Chipr

Specifications of TEMT1020

• Maximum Power Dissipation: 100 mW
• Maximum Dark Current: 200 nA
• Maximum Operating Temperature: + 85 C
• Minimum Operating Temperature: - 40 C
• Package / Case: SMD
• Transistor Polarity: NPN
• Wavelength Typ: 880nm
• Power Consumption: 100mW
• Viewing Angle: 15°
• No. Of Pins: 2
• Msl: MSL 2 - 1 Year
• Light Current: 7.0mA
• Dark Current: 200nA
• C-e Breakdown Voltage: 70V
• Voltage - Collector Emitter Breakdown (max): 70V
• Current - Collector (ic) (max): 50mA
• Current - Dark (id) (max): 200nA
• Wavelength: 950nm
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Orientation: Top View
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TEMT1000/1020/1030/1040
Vishay Semiconductors
Taping TEMT1000
18089
Taping TEMT1020
18090
Document Number 81554
www.vishay.com
Rev. 1.5, 28-Nov-06
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