BP 104 FAS-Z OSRAM Opto Semiconductors Inc, BP 104 FAS-Z Datasheet - Page 3

• Manufacturer Part Number: BP 104 FAS-Z
• Description: Photodiodes PHOTODIODE, SMT
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr
• Series: -r

Specifications of BP 104 FAS-Z

• Photodiode Material: Silicon
• Peak Wavelength: 880 nm
• Half Intensity Angle Degrees: 60 deg
• Maximum Reverse Voltage: 20 V
• Maximum Power Dissipation: 150 mW
• Maximum Light Current: 34 uA
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 20 ns
• Maximum Fall Time: 20 ns
• Package / Case: DIL-SMT-2
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Wavelength: 880nm
• Output Type: Current
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 20V
• Forward Voltage: 1.3V
• Responsivity: 0.65A/W
• Dark Current (max): 30nA
• Power Dissipation: 150mW
• Light Current: 34uA
• Rise Time: 20ns
• Fall Time: 20ns
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 2
• Package Type: SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q65110A2672

Kennwerte (T
Characteristics (cont’d)
Bezeichnung
Parameter
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R
Durchlassspannung,
Forward voltage
Kapazität,
Capacitance
Temperaturkoeffizient von
Temperature coefficient of
Temperaturkoeffizient von
Temperature coefficient of
Rauschäquivalente Strahlungsleistung
Noise equivalent power
V
Nachweisgrenze,
Detection limit
2007-04-18
L
R
= 50 Ω;
= 10 V
V
V
R
R
= 0 V,
A
= 5 V; λ = 850 nm;
= 25
V
R
f
°
I
= 10 V
= 1 MHz,
F
C, λ = 880 nm)
= 100 mA,
V
I
V
I
SC
SC
O
O
E
= 0
I
E
p
= 800 µA
= 0
Symbol
Symbol
t
V
C
TC
TC
NEP
D*
r
3
,
F
0
t
V
I
f
BP 104 FAS, BP 104 FASR
Wert
Value
20
1.3
48
– 2.6
0.18
3.6 × 10
6.1 × 10
–14
12
Einheit
Unit
ns
V
pF
mV/K
%/K
cm
-------------------------- -
----------- -
W
Hz
×
W
Hz