BPW21R Vishay, BPW21R Datasheet - Page 2

• Manufacturer Part Number: BPW21R
• Description: Photodiodes 50 Degree 300mW
• Manufacturer: Vishay
• Type: Silicon PIN Photodioder
• Series: -r

Specifications of BPW21R

• Lens Type: Flat Glass
• Photodiode Material: Silicon
• Peak Wavelength: 565 nm
• Half Intensity Angle Degrees: 50 deg
• Maximum Reverse Voltage: 10 V
• Maximum Power Dissipation: 300 mW
• Maximum Light Current: 9 uA
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 3.1 us
• Maximum Fall Time: 3 us
• Package / Case: TO-5
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 55 C
• Wavelength Typ: 565nm
• Half Angle: 50°
• Dark Current: 2nA
• Diode Case Style: TO-5
• No. Of Pins: 2
• Operating Temperature Range: -40°C To +125°C
• Forward Voltage: 1.3V
• Mounting Type: Through Hole
• Photodiode Type: PIN
• Polarity: Forward
• Reverse Breakdown Voltage: 10V
• Dark Current (max): 30nA
• Power Dissipation: 300mW
• Light Current: 9uA
• Rise Time: 3100ns
• Fall Time: 3000ns
• Operating Temp Range: -55C to 125C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 2
• Package Type: TO-5
• Active Area: 7.5mm
• Fall Time Tf: 3.5µs
• Half Sensitivity Angle ±: 50°
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Note
T
BASIC CHARACTERISTICS
T
Document Number: 81519
Rev. 1.6, 08-Sep-08
amb
amb
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Dark resistance
Open circuit voltage
Temperature coefficient of V
Short circuit current
Temperature coefficient of I
Reverse light current
Sensitivity
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Rise time
Fall time
= 25 °C, unless otherwise specified
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
= 25 °C, unless otherwise specified
94 8468
10
10
10
10
10
4
3
2
1
20
T
amb
40
- Ambient Temperature (°C)
K
o
60
80
For technical questions, contact: [e-mail]
Silicon Photodiode, RoHS Compliant
V
V
R
R
V
100
V
V
V
= 0 V, R
= 0 V, R
R
R
R
R
= 5 V, E
= 5 V
E
= 0 V, f = 1 MHz, E = 0
= 5 V, f = 1 MHz, E = 0
TEST CONDITION
I
A
R
V
120
= 1 klx, V
R
= 20 µA, E = 0
V
I
E
E
E
E
F
L
L
R
= 5 V, E = 0
A
A
A
A
= 50 mA
= 1 kΩ, λ = 660 nm
= 1 kΩ, λ = 660 nm
= 10 mV
A
= 1 klx
= 1 klx
= 1 klx
= 1 klx
= 10
R
-2
= 5 V
to 10
5
lx
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
SYMBOL
V
TK
TK
λ
C
C
R
V
V
I
I
λ
(BR)
I
S
ϕ
0.5
t
t
ro
ra
k
p
r
f
F
D
D
D
o
Vo
Ik
94 8738
1.3
1.2
1.1
1.0
0.9
0.8
0
MIN.
280
4.5
4.5
10
20
T
amb
Vishay Semiconductors
40
- Ambient Temperature
420 to 675
- 0.05
TYP.
± 50
400
450
565
1.0
1.2
3.1
3.0
- 2
38
2
9
9
9
60
80
MAX.
100
1.3
30
BPW21R
www.vishay.com
120
UNIT
mV/K
nA/Ix
%/K
deg
GΩ
mV
nm
nm
nA
nF
pF
µA
µA
µs
µs
V
V
379