BP104 Vishay, BP104 Datasheet - Page 2
BP104
Manufacturer Part Number
BP104
Description
Photodiodes 65 Degree 215mW
Manufacturer
Vishay
Type
Silicon PIN Photodioder
Specifications of BP104
Peak Wavelength
950 nm
Lens Type
Epoxy
Photodiode Material
Silicon
Maximum Reverse Voltage
60 V
Maximum Power Dissipation
215 mW
Maximum Light Current
45 uA
Maximum Dark Current
30 nA
Maximum Rise Time
100 ns
Maximum Fall Time
100 ns
Package / Case
TO-5
Maximum Operating Temperature
+ 100 C
Wavelength Typ
950nm
Half Angle
65°
Dark Current
2nA
Diode Case Style
Top View
No. Of Pins
2
Operating Temperature Range
-40°C To +100°C
Mounting Type
Through Hole
Svhc
No SVHC (20-Jun-2011)
Breakdown Voltage Vbr
60V
Rohs Compliant
Yes
Photodiode Type
PIN
Polarity
Forward
Reverse Breakdown Voltage
60V
Dark Current (max)
30nA
Power Dissipation
215mW
Light Current
45uA
Rise Time
100ns
Fall Time
100ns
Mounting
Through Hole
Pin Count
2
Package Type
TO-5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
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Company
Part Number
Manufacturer
Quantity
Price
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Part Number:
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Manufacturer:
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Quantity:
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Part Number:
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Part Number:
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Part Number:
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Part Number:
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Part Number:
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Manufacturer:
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Quantity:
20 000
Note
T
BASIC CHARACTERISTICS
T
Document Number: 81500
Rev. 1.5, 16-Sep-08
amb
amb
BASIC CHARACTERISTICS
PARAMETER
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit Voltage
Short circuit current
Reverse light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
= 25 °C, unless otherwise specified
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
= 25 °C, unless otherwise specified
94 8403
1000
100
10
1
20
T
amb
40
- Ambient Temperature (°C)
60
Silicon PIN Photodiode, RoHS Compliant
For technical questions, contact: detectortechsupport@vishay.com
V
R
= 10 V
V
V
R
R
80
E
E
E
= 10 V, R
= 10 V, R
V
V
e
e
e
= 1 mW/cm
R
R
V
= 1 mW/cm
= 1 mW/cm
= 0 V, f = 1 MHz, E = 0
= 3 V, f = 1 MHz, E = 0
R
TEST CONDITION
I
R
V
= 10 V, λ = 950 nm
R
= 100 µA, E = 0
100
= 10 V, E = 0
V
L
L
R
= 1 kΩ, λ = 820 nm
= 1 kΩ, λ = 820 nm
= 5 V
2
2
2
, λ = 950 nm,
, λ = 950 nm
, λ = 950 nm
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
SYMBOL
V
NEP
λ
C
C
V
I
I
λ
(BR)
I
ϕ
t
ro
ra
0.5
t
k
r
f
D
D
o
p
94 8409
1.4
1.2
1.0
0.8
0.6
0
MIN.
60
40
T
20
amb
Vishay Semiconductors
- Ambient Temperature (°C)
870 to 1050
4 x 10
λ = 950 nm
V
40
TYP.
± 65
350
950
100
100
R
70
25
38
45
2
= 5 V
BP104, BP104S
-14
60
MAX.
30
40
80
www.vishay.com
100
W/√ Hz
UNIT
deg
mV
nm
nm
nA
pF
pF
µA
µA
ns
ns
V
331