BP104 Vishay, BP104 Datasheet - Page 3
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BP104
Manufacturer Part Number
BP104
Description
Photodiodes 65 Degree 215mW
Manufacturer
Vishay
Type
Silicon PIN Photodioder
Specifications of BP104
Peak Wavelength
950 nm
Lens Type
Epoxy
Photodiode Material
Silicon
Maximum Reverse Voltage
60 V
Maximum Power Dissipation
215 mW
Maximum Light Current
45 uA
Maximum Dark Current
30 nA
Maximum Rise Time
100 ns
Maximum Fall Time
100 ns
Package / Case
TO-5
Maximum Operating Temperature
+ 100 C
Wavelength Typ
950nm
Half Angle
65°
Dark Current
2nA
Diode Case Style
Top View
No. Of Pins
2
Operating Temperature Range
-40°C To +100°C
Mounting Type
Through Hole
Svhc
No SVHC (20-Jun-2011)
Breakdown Voltage Vbr
60V
Rohs Compliant
Yes
Photodiode Type
PIN
Polarity
Forward
Reverse Breakdown Voltage
60V
Dark Current (max)
30nA
Power Dissipation
215mW
Light Current
45uA
Rise Time
100ns
Fall Time
100ns
Mounting
Through Hole
Pin Count
2
Package Type
TO-5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BP104
Manufacturer:
OSRAM
Quantity:
6 000
Part Number:
BP104
Manufacturer:
德律风根
Quantity:
20 000
Company:
Part Number:
BP104BS
Manufacturer:
SIEMENS
Quantity:
19 050
Company:
Part Number:
BP104F
Manufacturer:
AGIIENT
Quantity:
7 490
Company:
Part Number:
BP104F/FS
Manufacturer:
OSRAM
Quantity:
70 000
Part Number:
BP104FAS
Manufacturer:
OSRAM/欧司朗
Quantity:
20 000
Part Number:
BP104S
Manufacturer:
OSRAM/欧司朗
Quantity:
20 000
BP104, BP104S
Vishay Semiconductors
www.vishay.com
332
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 5 - Diode Capacitance vs. Reverse Voltage
94 8415
94 8414
Fig. 3 - Reverse Light Current vs. Irradiance
948407
1000
100
100
10
0.1
80
60
40
20
10
1
0
1
0.1
0.01
0.1
λ
= 950 nm
V
E
V
R
R
- Reverse Voltage (V)
e
0.1
- Irradiance (mW/cm²)
1
- Reverse Voltage (V)
1
f = 1 MHz
E = 0
For technical questions, contact: detectortechsupport@vishay.com
10
10
1 mW/cm
0.05 mW/cm
0.02 mW/cm
1
0.5 mW/cm
0.2 mW/cm
0.1 mW/cm
λ
V
= 950 nm
R
Silicon PIN Photodiode, RoHS Compliant
= 5 V
2
2
2
2
2
2
100
100
10
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
94 8406
94 8408
0.8
0.6
0.4
1.2
1.0
0.2
1.0
0.9
0.8
0.7
0
750
0.6
0.4
850
- Wavelength (nm)
0.2
950
0°
0
Document Number: 81500
10°
1050
Rev. 1.5, 16-Sep-08
20°
1150
30°
40°
50°
60°
70°
80°