BPW41N Vishay, BPW41N Datasheet

Photodiodes 60V 215mW 950nm

BPW41N

Manufacturer Part Number
BPW41N
Description
Photodiodes 60V 215mW 950nm
Manufacturer
Vishay
Type
Silicon PIN Photodioder
Series
-r
Datasheets

Specifications of BPW41N

Lens Type
Epoxy
Photodiode Material
Silicon
Peak Wavelength
950 nm
Maximum Reverse Voltage
60 V
Maximum Power Dissipation
215 mW
Maximum Light Current
45 uA
Maximum Dark Current
30 nA
Maximum Rise Time
100 ns
Maximum Fall Time
100 ns
Package / Case
Side Looker
Maximum Operating Temperature
+ 100 C
Wavelength Typ
950nm
Half Angle
65°
Dark Current
2nA
Diode Case Style
Side Looking
No. Of Pins
2
Leaded Process Compatible
Yes
Reverse Voltage Vr
60V
Capacitance
70pF
Active Area
7.5mm2
Breakdown Voltage Vbr
60V
Diode Type
Photodiode
External Depth
4mm
Rohs Compliant
Yes
Svhc
No SVHC (20-Jun-2011)
Photodiode Type
PIN
Polarity
Forward
Reverse Breakdown Voltage
60V
Dark Current (max)
30nA
Power Dissipation
215mW
Light Current
45uA
Rise Time
100ns
Fall Time
100ns
Mounting
Through Hole
Pin Count
2
Package Type
Side View
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BPW41N
Manufacturer:
MOT
Quantity:
392
Part Number:
BPW41N
Quantity:
300
Part Number:
BPW41N
Manufacturer:
VISHAY
Quantity:
3 439
Part Number:
BPW41N
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
BPW41N-1
Manufacturer:
8262565
Quantity:
996
Silicon PIN Photodiode
Description
BPW41N is a high speed and high sensitive PIN pho-
todiode in a flat side view plastic package.
The epoxy package itself is an IR filter, spectrally
matched to GaAs or GaAs on GaAlAs IR emitters
The large active area combined with a flat case gives
a high sensitivity at a wide viewing angle.
Features
Absolute Maximum Ratings
T
Electrical Characteristics
T
Document Number 81522
Rev. 1.3, 08-Mar-05
• Large radiant sensitive area (A = 7.5 mm
• Wide angle of half sensitivity ϕ = ± 65 °
• High radiant sensitivity
• Fast response times
• Small junction capacitance
• Plastic case with IR filter (λ = 950 nm)
• Suitable for near infrared radiation
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
Reverse Voltage
Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/
Ambient
Breakdown Voltage
Reverse Dark Current
Diode capacitance
amb
amb
p
and WEEE 2002/96/EC
= 950 nm).
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
T
t ≤ 5 s
I
V
V
V
R
amb
R
R
R
= 100 µA, E = 0
= 10 V, E = 0
= 0 V, f = 1 MHz, E = 0
= 3 V, f = 1 MHz, E = 0
≤ 25 °C
Test condition
Test condition
2
)
Applications
High speed photo detector
Symbol
V
C
C
(BR)
I
ro
D
D
Symbol
R
T
T
V
P
thJA
T
stg
sd
R
V
j
Min
60
- 55 to + 100
Vishay Semiconductors
Value
Typ.
215
100
260
350
70
25
60
2
94 8480
BPW41N
Max
30
40
www.vishay.com
K/W
Unit
mW
°C
°C
°C
V
Unit
nA
pF
pF
V
1

Related parts for BPW41N

BPW41N Summary of contents

Page 1

... Silicon PIN Photodiode Description BPW41N is a high speed and high sensitive PIN pho- todiode in a flat side view plastic package. The epoxy package itself filter, spectrally matched to GaAs or GaAs on GaAlAs IR emitters (λ = 950 nm). p The large active area combined with a flat case gives a high sensitivity at a wide viewing angle ...

Page 2

... BPW41N Vishay Semiconductors Optical Characteristics °C, unless otherwise specified amb Parameter Open Circuit Voltage mW/cm e Temp. Coefficient mW/ Short Circuit Current mW/cm e Temp. Coefficient mW/ Reverse Light Current mW/ Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth = 10 V, λ = 950 nm Noise Equivalent Power ...

Page 3

... Figure 6. Relative Spectral Sensitivity vs. Wavelength 0° 10 ° 1.0 0.9 0.8 0.7 0.6 0.4 0.2 0 0.2 0.4 94 8406 Figure 7. Relative Radiant Sensitivity vs. Angular Displacement Document Number 81522 Rev. 1.3, 08-Mar-05 100 1150 20 ° 30° 40° 50° 60° 70° 80° 0.6 BPW41N Vishay Semiconductors www.vishay.com 3 ...

Page 4

... BPW41N Vishay Semiconductors Package Dimensions in mm www.vishay.com 4 96 12195 Document Number 81522 Rev. 1.3, 08-Mar-05 ...

Page 5

... Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 81522 Rev. 1.3, 08-Mar-05 and may do so without further notice. BPW41N Vishay Semiconductors www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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