BPV10NF Vishay, BPV10NF Datasheet - Page 3

Photodiodes 60V 215mW 875nm

BPV10NF

Manufacturer Part Number
BPV10NF
Description
Photodiodes 60V 215mW 875nm
Manufacturer
Vishay
Type
Silicon PIN Photodioder
Datasheets

Specifications of BPV10NF

Lens Type
Black Epoxy
Photodiode Material
Silicon
Peak Wavelength
940 nm
Maximum Reverse Voltage
60 V
Maximum Power Dissipation
215 mW
Maximum Light Current
60 uA
Maximum Dark Current
5 nA
Maximum Rise Time
2.5 ns
Maximum Fall Time
2.5 ns
Package / Case
T-1 3/4
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Wavelength Typ
940nm
Sensitivity
0.55A/W
Bandwidth
100MHz
Half Angle
20°
Dark Current
1nA
Diode Case Style
T-1 3/4
No. Of Pins
2
Operating Temperature Range
-40°C To +100°C
Active Area
0.78mm2
Rohs Compliant
Yes
Svhc
No SVHC (20-Jun-2011)
Photodiode Type
PIN
Polarity
Forward
Reverse Breakdown Voltage
60V
Forward Voltage
1.3V
Responsivity
0.55A/W
Dark Current (max)
5nA
Power Dissipation
215mW
Light Current
60uA
Rise Time
2.5ns
Fall Time
2.5ns
Operating Temp Range
-40C to 100C
Operating Temperature Classification
Industrial
Mounting
Through Hole
Pin Count
2
Package Type
T-1 3/4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BPV10NF
Manufacturer:
OSRAM
Quantity:
2 000
Part Number:
BPV10NF
Manufacturer:
VISHAY
Quantity:
300
Part Number:
BPV10NF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
BPV10NF
Quantity:
70 000
BPV10NF
Vishay Semiconductors
www.vishay.com
340
94 8622
94 8439
94 8623
Fig. 4 - Reverse Light Current vs. Reverse Voltage
Fig. 5 - Diode Capacitance vs. Reverse Voltage
1000
100
100
0.1
Fig. 3 - Reverse Light Current vs. Irradiance
10
10
12
10
1
1
8
6
4
2
0
0.01
0.1
0.1
0.05 mW/cm
0.02 mW/cm
0.5 mW/cm
0.2 mW/cm
0.1 mW/cm
1 mW/cm
E
V
V
e
R
R
- Irradiance (mW/cm²)
2
- Reverse Voltage (V)
0.1
- Reverse Voltage (V)
1
1
2
2
2
2
2
λ
V
= 870 nm
R
= 5 V
For technical questions, contact: detectortechsupport@vishay.com
10
10
1
λ
f = 1 MHz
= 870 nm
E = 0
Silicon PIN Photodiode, RoHS Compliant
100
100
10
Fig. 7 - Relative Radiant Sensitivity vs. Angular Displacement
Fig. 6 - Relative Spectral Sensitivity vs. Wavelength
94 8426
94 8624
1.0
0.9
0.8
0.7
1.2
1.0
0.8
0.6
0.4
0.2
0.0
750
0.6
0.4
850
λ - Wavelength (nm)
0.2
0
950
Document Number: 81503
10°
1050
Rev. 1.7, 16-Sep-08
20°
1150
30°
40°
50°
60°
70°
80°

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