6N137F Toshiba, 6N137F Datasheet - Page 2

• Manufacturer Part Number: 6N137F
• Description: High Speed Optocouplers IC cplr 10Mbps CTR=1000%typ
• Manufacturer: Toshiba

Specifications of 6N137F

• Input Type: DC
• Isolation Voltage: 2500 Vrms
• Maximum Continuous Output Current: 50 mA
• Maximum Fall Time: 75 ns
• Maximum Forward Diode Current: 20 mA
• Maximum Rise Time: 75 ns
• Output Device: Logic Gate Photo IC
• Configuration: 1 Channel
• Current Transfer Ratio: 1000 %
• Maximum Baud Rate: 10 MBps
• Maximum Forward Diode Voltage: 1.75 V
• Maximum Reverse Diode Voltage: 5 V
• Maximum Input Diode Current: 20 mA
• Maximum Power Dissipation: 85 mW
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Package / Case: DIP-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings
Recommended Operating Conditions
Precaution
Operating temperature range
Storage temperature range
Lead solder temperature (10 s)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
(Note 1) 50% duty cycle, 1ms pulse width.
(Note 2) Soldering portion of lead: Up to 2mm from the body of the device.
Input current, low level each channel
Input current, high level each channel
High level enable voltage
Low level enable voltage (output high)
Supply voltage, output*
Fan out (TTL load)
Operating temperature
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length
between capacitor and coupler should not exceed 1cm.
Please be careful of the followings.
A ceramic capacitor(0.1μF)should be connected from pin 8 to pin 5 to stabilize the operation of the high gain
Forward current
Pulse forward current
Reverse voltage
Output current
Output voltage
Supply voltage (1 minute maximum)
Enable input voltage
(not to exceed V
Output collector power dissipation
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
*This item denotes operating ranges, not meaning of recommended operating conditions.
Characteristic
Characteristic
CC
by more than 500mV)
Symbol
V
V
V
I
I
Ta
FH
FL
N
EH
CC
EL
(Note 1)
(Note 2)
Min.
2.0
4.5
―
0
7
0
0
Symbol
V
V
T
T
T
I
V
P
V
2
I
I
FP
opr
CC
EH
stg
sol
O
F
R
O
O
Max.
V
250
0.8
5.5
20
70
CC
8
Unit
mA
−55~125
μA
°C
―
V
V
V
Rating
0~70
260
5.5
20
40
50
85
5
7
7
Unit
mW
mA
mA
mA
°C
°C
°C
V
V
V
V
2007-10-01
6N137