BGA 751L7 E6327 Infineon Technologies, BGA 751L7 E6327 Datasheet - Page 17

RF Amplifier RF SILICON MMIC

BGA 751L7 E6327

Manufacturer Part Number
BGA 751L7 E6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Single Band Low Noise Amplifierr
Datasheet

Specifications of BGA 751L7 E6327

Mounting Style
SMD/SMT
Operating Frequency
800 MHz to 900 MHz
Noise Figure
1.05 dB
Operating Supply Voltage
2.6 V to 3 V
Supply Current
3.3 mA, 0.5 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 30 C
Package / Case
TSLP-7-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA751L7E6327XT
3.2
Figure 3
Note: Package paddle (Pin 0) has to be RF grounded.
Table 10
Part Number
L1, L2
C1 ... C3
3.3
Table 11
Pin Number
1
2
3
4
5
6
7
Data Sheet
UMTS band VIII Application Circuit Schematic
Application circuit with chip outline (top view)
Parts List
Pin Definition
Pin Definition and Function
Part Type
Chip inductor
Chip capacitor
Symbol
RFIN
VEN
VGS
VCC
RREF
RFOUT
GND
Manufacturer
Various
Various
Function
LNA input (800/900 MHz)
Band select control
Gain step control
Supply voltage
Bias current reference resistor (high gain mode)
LNA output (800/900 MHz)
Package paddle; ground connection for LNA and control circuitry
BGA751L7 - Low Power Single-Band UMTS LNA
17
UMTS band VIII Application Circuit Schematic
Size
0402
0402
Application Circuit and Block Diagram
Comment
Wirewound, Q ≈ 50
V3.2, 2009-05-27

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