BGA 711L7 E6327 Infineon Technologies, BGA 711L7 E6327 Datasheet

RF Amplifier RF SILICON MMIC

BGA 711L7 E6327

Manufacturer Part Number
BGA 711L7 E6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Single Band Low Noise Amplifierr
Datasheet

Specifications of BGA 711L7 E6327

Mounting Style
SMD/SMT
Operating Frequency
2100 MHz
Noise Figure
1.1 dB
Operating Supply Voltage
2.6 V to 3 V
Supply Current
3.6 mA
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 30 C
Package / Case
TSLP-7-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA711L7E6327XT
D a t a S h e e t , V 3 . 2 , M a y 2 0 0 9
B G A 7 1 1 L 7
S i ng l e - B an d U M T S L N A
( 2 1 0 0 , 1 9 0 0 M H z )
R F & P r o t e c t i o n D e v i c e s

Related parts for BGA 711L7 E6327

BGA 711L7 E6327 Summary of contents

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... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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BGA711L7 Revision History: 2009-05-27, V3.2 Previous Version: 2008-11-05, V3.1 Page Subjects (major changes since last revision) 7 Updated DC Characteristics (added limits) 9, 10, 11 Updated footnotes 18 Updated value Application Circuit Schematic for band II Data ...

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Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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Description The BGA711L7 is a low current single-band low noise amplifier MMIC for UMTS bands I, IV and X. The LNA is based upon Infineon’s proprietary and cost-effective SiGe:C technology and comes in a low profile TSLP-7-1 leadless green ...

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Electrical Characteristics 2.1 Absolute Maximum Ratings Table 1 Absolute Maximum Ratings Parameter Symbol V Supply voltage CC I Supply current CC V Pin voltage PIN V Pin voltage RF Input Pin RFIN P RF input power RFIN T Junction ...

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DC Characteristics Table 4 DC Characteristics, Parameter Symbol V Supply voltage CC I Supply current high gain CCHG mode I Supply current low gain CCLG mode I Supply current standby CCOFF mode V Logic level high HI V Logic ...

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Supply current and Power gain characteristics; Supply current and Power gain high gain mode versus reference resistor R reference resistor; low gain mode supply current is independent of reference resistor Supply Current = ...

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Measured RF Characteristics UMTS Bands (with reference resistor) 2.9 Measured RF Characteristics UMTS Bands (with reference resistor) Table 7 Typical Characteristics 2100 MHz Band T Parameter Pass band range band ...

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Measured RF Characteristics UMTS Bands (without ref. resistor) Table 8 Typical Characteristics 2100 MHz Band T Parameter Pass band range band Pass band range band IV Current consumption Gain 1) Reverse ...

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Measured RF Characteristics UMTS Band II (with reference resistor) Table 9 Typical Characteristics 1900 MHz Band T Parameter Pass band range band II Current consumption Gain 1) Reverse Isolation Noise figure 1) Input return loss 1) Output return loss ...

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Measured Performance High Band (Band I) High Gain Mode vs. Frequency ° Power Gain | = ...

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Measured Performance High Band (Band I) High Gain Mode vs. Temperature NF f Noise Figure = 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 2.11 2.12 2.13 2.14 Frequency [GHz] 2.13 Measured Performance High Band (Band ...

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NF T Noise Figure = 1.8 1.6 1.4 1.2 1 0.8 0.6 −40 − [°C] A 2.14 Measured Performance High Band (Band I) Low Gain Mode vs. Frequency ...

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Matching | | = −5 −10 −15 −20 −25 −30 2.11 2.12 2.13 2.14 Frequency [GHz Noise Figure = ...

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Measured Performance High Band (Band I) Low Gain Mode vs. Temperature 2.15 Measured Performance High Band (Band I) Low Gain Mode vs. Temperature 2 2 ...

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Application Circuit and Block Diagram 3.1 UMTS bands I, IV and X Application Circuit Schematic C1 10pF RFIN 2100 MHz L1 2nH C2 100 2 2 ...

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UMTS band II Application Circuit Schematic C1 10pF RFIN 1 1900 MHz L1 RFIN 2.7nH C2 100pF 2 VEN 2 VGS Figure 3 Application circuit ...

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Application Board Figure 4 Application board layout on 3-layer FR4. Top layer thickness: 0.2 mm, bottom layer thickness: 0.8 mm, 17 µm Cu metallization, gold plated. Board size Figure 5 Cross-section view of application board ...

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Figure 6 Detail of application board layout Note: In order to achieve the same performance as given in this datasheet please follow the suggested PCB-layout as closely as possible. The position of the GND vias is critical for RF performance. ...

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Physical Characteristics 4.1 Package Dimensions 1.4 0.3 0.3 0.3 Copper Solder mask Figure 7 Recommended footprint and stencil layout for the TSLP-7-1 package Top view Pin 1 marking 1) Dimension applies to plated terminal Figure 8 ...

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Figure 10 Marking Layout Data Sheet BGA711L7 - Low Power Single-Band UMTS LNA 22 Physical Characteristics Package Dimensions V3.2, 2009-05-27 ...

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... Published by Infineon Technologies AG ...

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