IDT10S60C Infineon Technologies, IDT10S60C Datasheet - Page 3

• Manufacturer Part Number: IDT10S60C
• Description: Schottky (Diodes & Rectifiers) 2ND GEN THINQ 600V SiC Schottky Diode
• Manufacturer: Infineon Technologies

Specifications of IDT10S60C

• Product: Schottky Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 10 A
• Max Surge Current: 84 A
• Configuration: Single
• Forward Voltage Drop: 1.7 V
• Maximum Reverse Leakage Current: 140 uA
• Operating Temperature Range: - 55 C to + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Technology: thinQ!™ 2G
• V: 600.0 V
• If (typ): 10.0 A
• Qc (typ): 24.0 nC
• Package: TO-220 (decapped middle leg)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IDT10S60CXK

Rev. 2.0
1 Power dissipation
P
parameter: R
3 Typ. forward characteristic
I
parameter: T
F
tot
=f(V
=f(T
100
80
60
40
20
30
20
10
F
0
0
); t
C
25
0
)
p
=400 µs
j
thJC(max)
50
1
75
-55 °C
100
T
V
25 °C
C
F
2
[°C]
[V]
125
100 °C
150 °C
150
3
175°C
175
200
page 3
4
2 Diode forward current
I
parameter: R
4 Typ. forward characteristic in surge current
mode
I
F
F
=f(T
=f(V
120
100
30
25
20
15
10
80
60
40
20
C
F
5
0
0
); T
); t
25
0
p
j
=400 µs; parameter: T
≤175 °C
thJC(max)
50
2
75
; V
150 °C
F(max)
100 °C
25 °C
100
T
V
C
F
4
[°C]
[V]
125
j
175°C
150
-55 °C
6
IDT10S60C
175
2006-03-14
200
8