RN1306(TE85L,F) Toshiba, RN1306(TE85L,F) Datasheet
RN1306(TE85L,F)
Specifications of RN1306(TE85L,F)
Related parts for RN1306(TE85L,F)
RN1306(TE85L,F) Summary of contents
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... TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2301~RN2306 Equivalent Circuit and Bias Resistor Values (Ta = 25° ° ° ° C) ...
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Electrical Characteristics Characteristic Collector cut-off current RN1301~1306 RN1301 RN1302 RN1303 Emitter cut-off current RN1304 RN1305 RN1306 RN1301 RN1302 RN1303 DC current gain RN1304 RN1305 RN1306 Collector-emitter RN1301~1306 saturation voltage RN1301 RN1302 RN1303 Input voltage (ON) RN1304 RN1305 RN1306 RN1301~1304 Input ...
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RN1301~RN1306 3 2001-06-07 ...
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RN1301~RN1306 4 2001-06-07 ...
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RN1301~RN1306 5 2001-06-07 ...
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Type Name Marking RN1301 RN1302 RN1303 RN1304 RN1305 RN1306 RN1301~RN1306 6 2001-06-07 ...
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... TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property ...