FZ600R12KE3 Infineon Technologies, FZ600R12KE3 Datasheet

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FZ600R12KE3

Manufacturer Part Number
FZ600R12KE3
Description
IGBT Modules 1200V 600A SINGLE
Manufacturer
Infineon Technologies
Datasheets

Specifications of FZ600R12KE3

Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
1.7 V
Continuous Collector Current At 25 C
900 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
2800 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
62MM
Dc Collector Current
900A
Collector Emitter Voltage Vces
2.15V
Power Dissipation Pd
2.8kW
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +125°C
Transistor Case Style
Module
Rohs Compliant
Yes
Ic (max)
600.0 A
Vce(sat) (typ)
1.7 V
Technology
IGBT3
Housing
62 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FZ600R12KE3
Manufacturer:
Infineon Technologies
Quantity:
135
Part Number:
FZ600R12KE3
Manufacturer:
EUPEC
Quantity:
27
Part Number:
FZ600R12KE3
Manufacturer:
EUPEC
Quantity:
387
Part Number:
FZ600R12KE3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
FZ600R12KE3
Quantity:
55
Company:
Part Number:
FZ600R12KE3
Quantity:
350
Company:
Part Number:
FZ600R12KE3
Quantity:
350
Part Number:
FZ600R12KE3S
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Part Number:
FZ600R12KE3S
Quantity:
55
Part Number:
FZ600R12KE3_B1
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Part Number:
FZ600R12KE3_B1
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Technische Information / technical information
IGBT-Module
IGBT-modules
62mm C-Serien Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode
62mm C-Series module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode
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Related parts for FZ600R12KE3

FZ600R12KE3 Summary of contents

Page 1

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Page 2

... >< FZ600R12KE3 6NO , &P< P<Q 6NO , & P< &P<Q 6NO , & P< &P<Q 6NO , & P< (S* , & (S* , & !2Q ()* , (S*Q 6NO , &P< (S* , & & ( 6NO , &P< , :FQ 6NO , &P<Q ()* , & :FQ 6NO , &P<Q ()* , & (Q (S* , ()* , (Q ( 6NO , &P< ()* , (Q ( 6NO , &P< ()* , & ...

Page 3

... Diode-Wechselrichter / diode-inverter Höchstzulässige Werte / maximum rated values ; 7 > =< > Charakteristische Werte / characteristic values = > F_9 FZ600R12KE3 6NO , &P< 6NO , &P& & 23Y $6NO, &P< (S* , & & 23Y $6NO, &P< (S* , & & 23Y $6NO, &P< (S* , & jRDCE\ , 3$! jk^\DC\ , 3$! (445 -m 1 -m45 ...

Page 4

... Technische Information / technical information IGBT-Module IGBT-modules Modul / module - ; ] < > > FZ600R12KE3 >Q , & : jRDCE\ , 3$! jk^\DC\ , 3$! &P<Q > < < < <7 > > > (p+qr Q& < 2 sLt &Q Q &Q Q < EW)l Q #C)* 1 ))uv**u Q& 6NO 0De & 6NO /w 6CEk ? Q& & P< & P< ...

Page 5

... FZ600R12KE3 $ $()*' -) , $()*' -) , $()*' -) , $()*' 6NO , 6NO , 6NO , 6NO , &P< &P< &P< &P< 1200 1000 800 600 400 200 0 2,5 3,0 3,5 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 ...

Page 6

... S/ & 6NO , [Q 6NO , &P< &P< 1400 1300 -)Q -)Q <7 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 0 200 400 600 800 ()* y(z FZ600R12KE3 {EWh {EWh {EWh {EWh 0,1 0,01 0,001 0,001 $ J>L2' $ J>L2' $ J> ...

Page 7

... S/. , S/. , S ()* , 1 [Q ()* , 1 [Q ()* , 1 [Q ()* , %^\oQ 6NO , &P< 200 400 600 -m y2z {EWh {EWh {EWh {EWh 0,1 {EWh 0,001 0,001 0,01 0 FZ600R12KE3 7' 7' > 7 > > 7 > %^\ %^\ %^\ %^\ ()* , 1 2Q ()* , 1 2Q ()* , 1 2Q ()* , 800 1000 1200 & & %^\oQ 6NO , &P< ...

Page 8

... Technische Information / technical information IGBT-Module IGBT-modules Schaltplan / circuit diagram Gehäuseabmessungen / package outlines FZ600R12KE3 Infineon 8 ...

Page 9

... Risk and Quality Assessments; - the conclusion of Quality Agreements establish joint measures of an ongoing product survey, and that we may make delivery depended on the realization of any such measures. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. FZ600R12KE3 9 ...

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