IXGK75N250 IXYS, IXGK75N250 Datasheet - Page 2

• Manufacturer Part Number: IXGK75N250
• Description: IGBT Transistors
• Manufacturer: IXYS

Specifications of IXGK75N250

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 2500 V
• Collector-emitter Saturation Voltage: 2.7 V
• Maximum Gate Emitter Voltage: 30 V
• Continuous Collector Current At 25 C: 170 A
• Gate-emitter Leakage Current: 200 nA
• Power Dissipation: 780 W
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-264
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Vces, (v): 2500
• Ic25, Tc=25°c, Igbt, (a): 180
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.3
• Tfi, Typ, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Tf, Typ, Igbt, (ns): -
• Rthjc, Max, Igbt, (k/w): 0.17
• Package Style: TO-264

Symbol
(T
g
C
C
C
Q
Q
Q
t
t
t
t
R
R
Note
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
d(on)
r
d(off)
f
*Additional provision for lead-to-lead voltage isolation are required at V
fs
ies
oes
res
thJC
thCK
g
ge
gc
J
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
Test Conditions
I
V
I
Resistive Switching Times
I
V
C
C
C
CE
CE
= 60A, V
= 75A, V
= 150A, V
PRELIMINARY TECHNICAL INFORMATION
= 25V, V
= 1250V, R
CE
GE
GE
GE
= 10V, Note 1
= 15V, V
= 15V
= 0V, f = 1MHz
G
4,835,592
4,881,106
= 1Ω
CE
= 0.5 • V
4,931,844
5,017,508
5,034,796
CES
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
Min.
35
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
9000
Typ.
0.15
410
345
110
175
225
270
455
58
63
55
CE
>1200V.
0.16 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
S
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-264 AA ( IXGK) Outline
PLUS247
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
1
2
1
2
20.80
15.75
19.81
25.91
19.81
20.32
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Min.
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
TM
Millimeter
Millimeter
5.45 BSC
5.46 BSC
2 - Collector
3 - Emitter
(IXGX) Outline
7,005,734 B2
7,063,975 B2
26.16
19.96
20.83
21.34
16.13
20.32
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Max.
IXGK75N250
IXGX75N250
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
Back Side
1.020
Min.
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.190
.045
.024
.819
.620
.780
.150
.170
Min.
.090
.075
.075
.115
.220 0.244
.215 BSC
Terminals:
.215 BSC
Inches
Inches
7,157,338B2
Max.
1.030
Max.
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190
1 = Gate
2,4 = Collector
3 = Emitter