IXGK75N250 IXYS, IXGK75N250 Datasheet - Page 4

• Manufacturer Part Number: IXGK75N250
• Description: IGBT Transistors
• Manufacturer: IXYS

Specifications of IXGK75N250

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 2500 V
• Collector-emitter Saturation Voltage: 2.7 V
• Maximum Gate Emitter Voltage: 30 V
• Continuous Collector Current At 25 C: 170 A
• Gate-emitter Leakage Current: 200 nA
• Power Dissipation: 780 W
• Maximum Operating Temperature: + 150 C
• Package / Case: TO-264
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Vces, (v): 2500
• Ic25, Tc=25°c, Igbt, (a): 180
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.3
• Tfi, Typ, Igbt, (ns): -
• Eoff, Typ, Tj=125°c, Igbt, (mj): -
• Tf, Typ, Igbt, (ns): -
• Rthjc, Max, Igbt, (k/w): 0.17
• Package Style: TO-264

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
225
200
175
150
125
100
16
14
12
10
75
50
25
8
6
4
2
0
0
250
0
V
I
I
T
R
dv / dt < 10V / ns
C
G
J
CE
G
500
= 75A
= 10 mA
50
= 125ºC
= 1Ω
= 1000V
Fig. 9. Reverse-Bias Safe Operating Area
100
750
1000
150
Fig. 7. Gate Charge
Q
G
V
- NanoCoulombs
CE
1250
200
- Volts
1500
250
1750
300
2000
350
2250
400
2500
450
100,000
10,000
1,000
1.000
0.100
0.010
0.001
100
10
0.00001
0
f
= 1MHz
Fig. 10. Maximum Transient Thermal Impedance
5
0.0001
10
0.001
Fig. 8. Capacitance
Pulse Width - Seconds
15
V
CE
0.01
20
- Volts
25
0.1
IXGK75N250
IXGX75N250
C ies
C oes
C res
30
1
35
40
10