TISP8201MDR-S Bourns Inc., TISP8201MDR-S Datasheet - Page 3

• Manufacturer Part Number: TISP8201MDR-S
• Description: Sidacs PROTECTOR - BUFFERED N-GATE PROG. PROT.
• Manufacturer: Bourns Inc.

Specifications of TISP8201MDR-S

• Breakover Current Ibo Max: 11 A
• Rated Repetitive Off-state Voltage Vdrm: 120 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Repetitive peak off-state voltage, V
Repetitive peak reverse voltage, V
Non-repetitive peak on-state pulse current, (see Notes 1 and 2)
Non-repetitive peak on-state current, 50/60 Hz (see Notes 1, 2 and 3)
Non-repetitive peak gate current, 2/10 µs pulse, cathode commoned (see Note 1)
Junction temperature
Storage temperature range
NOTES: 1. Initially, the protector must be in thermal equilibrium with -40 °C ≤ T
Absolute Maximum Ratings for TISP8201M, T A = 25
Recommended Operating Conditions
C1, C2 Gate decoupling capacitor
R1, R2
TISP8200M & TISP8201M
10/1000 µs (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4)
5/310 µs (ITU-T K.20, K.21& K.45, K.44 open-circuit voltage wave shape 10/700 µs)
2/10 µs (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February 1999, Section 4)
100 ms
1 s
5 s
300 s
900 s
2. These non-repetitive rated currents are peak values. The rated current values may be applied to any cathode-anode terminal pair.
3. These non-repetitive rated terminal currents are for the TISP8200M and TISP8201M together. Device (A) terminal positive current
Series resistance for Telcordia GR-1089-CORE first-level and second-level surge survival
Series resistance for ITU-T K.20, K.21 and K.45 coordination with a 400 V primary protector
to its initial conditions.
Above 85 °C, derate linearly to zero at 150 °C lead temperature.
values are conducted by the TISP8201M and (K) terminal negative current values by the TISP8200M.
GK
GA
= 70 V
= 0
Rating
See Figure 10
°
C (Unless Otherwise Noted)
J
Customers should verify actual device performance in their specific applications.
≤ 85 °C. The surge may be repeated after the device returns
Symbol
V
Specifications are subject to change without notice.
V
I
I
I
T
GSM
TSM
DRM
RRM
TSP
T
stg
J
100
Min
15
10
MAY 1998 - REVISED JANUARY 2007
220
Typ
-55 to +150
-65 to +150
20
20
Value
-120
120
210
-10
6.5
3.4
1.4
1.3
45
70
11
Max
Unit
Unit
nF
°C
°C
A
Ω
V
V
A
A