TISP8200MDR-S Bourns Inc., TISP8200MDR-S Datasheet - Page 11
![Sidacs PROTECTOR - BUFFERED P-GATE PROG. PROT.](/photos/16/7/160738/soic-8_sml.jpg)
TISP8200MDR-S
Manufacturer Part Number
TISP8200MDR-S
Description
Sidacs PROTECTOR - BUFFERED P-GATE PROG. PROT.
Manufacturer
Bourns Inc.
Datasheet
1.TISP8201MDR-S.pdf
(11 pages)
Specifications of TISP8200MDR-S
Breakover Current Ibo Max
11 A
Rated Repetitive Off-state Voltage Vdrm
120 V
Off-state Leakage Current @ Vdrm Idrm
0.005 mA
Mounting Style
SMD/SMT
Package / Case
SOIC-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TISP8200MDR-S
Manufacturer:
AD
Quantity:
100
Part Number:
TISP8200MDR-S
Manufacturer:
BOURNS/伯恩斯
Quantity:
20 000
Devices are coded as below.
Device Symbolization Code
TISP8200M & TISP8201M
TISP8200M
TISP8201M
Device
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
MECHANICAL DATA
Symbolization
8200M
8201M
Customers should verify actual device performance in their specific applications.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
Specifications are subject to change without notice.
MAY 1998 - REVISED JANUARY 2007