TISP4350T3BJR-S Bourns Inc., TISP4350T3BJR-S Datasheet - Page 5

• Manufacturer Part Number: TISP4350T3BJR-S
• Description: Sidacs 275V(DRM)250A(IPP)350V(BO)
• Manufacturer: Bourns Inc.

Specifications of TISP4350T3BJR-S

• Breakover Voltage Vbo: +/- 350 V
• Breakover Current Ibo Max: 30 A
• Rated Repetitive Off-state Voltage Vdrm: 275 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Forward Voltage Drop: 3 V
• Off-state Capacitance Co: 16 pF, 20 pF, 43 pF, 48 pF, 54 pF
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: DO-214AA
• Minimum Operating Temperature: - 40 C
• Breakover Voltage Range: ± 350V
• Breakover Current Max.: 800A
• Thyristor Case: SMB
• No. Of Pins: 2
• Rohs Compliant: Yes
• Svhc: No SVHC (20-Jun-2011)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
DECEMBER 2001 - REVISED MAY 2008
Typical Characteristics
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TISP4xxxT3BJ Overvoltage Protector Series
1
NORMALIZED CAPACITANCE
OFF-STATE VOLTAGE
2
V
D
3
- Off-state Voltage - V
Figure 2.
5
vs
10
20 30 50
T
V
J
d
= 25 °C
= 1 Vrms
TC4TAA
100150
1.0
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0.0
1
TYPICAL CAPACITANCE ASYMMETRY
V
d
= 1 V rms, 1 MHz
2
OFF-STATE VOLTAGE
V
D
V
3
—
d
Figure 3.
= 10 mV rms, 1 MH z
Off-state Voltage - V
4 5
1
vs
7
0
20
30 40 50
TC4TAB