TGF1350-SCC TriQuint, TGF1350-SCC Datasheet

RF GaAs DC-18.0GHz 0.3mm MESFET

TGF1350-SCC

Manufacturer Part Number
TGF1350-SCC
Description
RF GaAs DC-18.0GHz 0.3mm MESFET
Manufacturer
TriQuint
Datasheet

Specifications of TGF1350-SCC

Drain Source Voltage Vds
8 V
Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
52.32 mS
Gate-source Breakdown Voltage
- 6 V
Power Dissipation
0.7 W
Package / Case
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1004310

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TGF1350-SCC
Manufacturer:
Triquint
Quantity:
1 400
Discrete MESFET
Description
The TriQuint TGF1350-SCC is a single-gate GaAs field-effect transistor (FET) used
for low-noise applications DC to 18 GHz. Bond pad is gold plated for compatibility
with thermocompression and thermosonic compatibility wire-bonding processes.
The TGF1350-SCC is readily assembled using automated equipment. Die attach
should be accomplished with conductive epoxy only. Eutectic attach is not
recommended .
TriQuint Semiconductor Texas : (972)994 8465
Key Features and Performance
Fax: (972)994 8504 Web: www.triquint.com
0.5 um x 300 um FET
1.5 dB Noise Figure with 11dB Associated
Gain at 10 GHz
2.5 dB Noise Figure with 7 dB Associated
Gain at 18 GHz
All-Gold Metallization for High Reliability
Recessed Gate Structure
0.620 x 0.514 x 0.102 mm (0.024 x 0.020 x
0.004 in.)
Product Data Sheet
TGF1350-SCC
February 1, 2002
1

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TGF1350-SCC Summary of contents

Page 1

... Discrete MESFET Description The TriQuint TGF1350-SCC is a single-gate GaAs field-effect transistor (FET) used for low-noise applications GHz. Bond pad is gold plated for compatibility with thermocompression and thermosonic compatibility wire-bonding processes. The TGF1350-SCC is readily assembled using automated equipment. Die attach should be accomplished with conductive epoxy only. Eutectic attach is not recommended ...

Page 2

... C 4/ These ratings represent the maximum operable values for this device. TriQuint Semiconductor Texas : (972)994 8465 Product Data Sheet TABLE I MAXIMUM RATINGS Value 0.7 W 150 320 -65 to 150 Fax: (972)994 8504 Web: www.triquint.com February 1, 2002 TGF1350-SCC Notes For M 2 ...

Page 3

... Source fixed at ground, drain not connected ) = 1.0 mA/mm (floating), 1.0 mA/mm forced into gate, gate-to- source voltage (V as BVGS; this cannot be measured if there are other DC connections between gate-drain, gate-source or drain-source. Fax: (972)994 8504 Web: www.triquint.com February 1, 2002 TGF1350-SCC Maximum Unit ...

Page 4

... The S-parameters are also available on floppy disk and the world wide web. TriQuint Semiconductor Texas : (972)994 8465 Product Data Sheet MAG ANG (°) MAG ANG (° Fax: (972)994 8504 Web: www.triquint.com February 1, 2002 TGF1350-SCC MAG ANG (°) MAG ANG (° 15mA 4 ...

Page 5

... Gat e–t o –d rain cap acit Drain –t o – rce cap acit Tim EQUIVALENT SCHEMATIC TriQuint Semiconductor Texas : (972)994 8465 P ARAMETER 15mA ARAMETER Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet February 1, 2002 TGF1350-SCC TES T CONDITIONS TYP 1 0 GHz GHz GHz GHz TANDARD DEVIATION VALUE UNIT 5 ...

Page 6

... GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handing, assembly and test. TriQuint Semiconductor Texas : (972)994 8465 Product Data Sheet Mechanical Drawing Fax: (972)994 8504 Web: www.triquint.com February 1, 2002 TGF1350-SCC 6 ...

Page 7

... Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : (972)994 8465 Assembly Process Notes Fax: (972)994 8504 Web: www.triquint.com Product Data Sheet February 1, 2002 TGF1350-SCC 7 ...

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