TGF1350-SCC TriQuint, TGF1350-SCC Datasheet - Page 3

• Manufacturer Part Number: TGF1350-SCC
• Description: RF GaAs DC-18.0GHz 0.3mm MESFET
• Manufacturer: TriQuint

Specifications of TGF1350-SCC

• Drain Source Voltage Vds: 8 V
• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 52.32 mS
• Gate-source Breakdown Voltage: - 6 V
• Power Dissipation: 0.7 W
• Package / Case: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1004310

I
V
V
V
DSS
P
BVGD
BVGS
: Pinch-Off Voltage; V
: Maximum drain current (I
gate width.
(V
: Breakdown Voltage, Gate-to-Source; gate-to-
: Breakdown Voltage, Gate-to-Drain; gate-to-
TriQuint Semiconductor Texas : [phone]
drain breakdown current (I
of gate width.
source breakdown current (I
of gate width.
Symbol
GS
BVGD
BVGS
) at zero volts.
Idss
V
P
FET Parameters
AUTOPROBE FET PARAMETER MEASUREMENT CONDITONS
Breakdown Voltage Gate-
Breakdown Voltage Gate-
Saturated Drain Current
GS
Pinch-off Voltage
for I
DS
Parameter
DS
) with gate voltage
BD
Source
Drain
= 0.5 mA/mm of
BS
) = 1.0 mA/mm
) = 1.0 mA/mm
(TA = 25 C
DC PROBE TEST
TABLE II
TABLE III
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5 C)
V
up to a maximum of 3.5 V in search of the maximum
value of I
V
0.5 mA/mm.
Drain fixed at ground, source not connected
(floating), 1.0 mA/mm forced into gate, gate-to-drain
voltage (V
BVGD; this cannot be measured if there are other
DC connections between gate-drain, gate-source or
drain-source.
Source fixed at ground, drain not connected
(floating), 1.0 mA/mm forced into gate, gate-to-
source voltage (V
as BVGS; this cannot be measured if there are other
DC connections between gate-drain, gate-source or
drain-source.
Minimum
GS
DS
= 0.0 V, drain voltage (V
fixed at 2.0 V, V
-1.8
-30
-30
30
DS
GD
; voltage for I
Product Data Sheet
) measured is V
Maximum
GS
Test Conditions
) measured is V
GS
-0.5
84
-6
-6
is swept to bring I
TGF1350-SCC
DSS
February 1, 2002
BVGD
is recorded as VDSP.
DS
) is swept from 0.5 V
and recorded as
BVGS
Unit
mA
V
V
V
and recorded
DS
to
3