FZT953TA Diodes Inc, FZT953TA Datasheet - Page 2
FZT953TA
Manufacturer Part Number
FZT953TA
Description
Bipolar Power PNP HighCt Low Sat
Manufacturer
Diodes Inc
Datasheet
1.FZT951.pdf
(5 pages)
Specifications of FZT953TA
Maximum Operating Frequency
125 MHz
Minimum Operating Temperature
- 55 C
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Package / Case
SOT-223
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
- 6 V
Maximum Dc Collector Current
5 A
Power Dissipation
3 W
Maximum Operating Temperature
+ 150 C
Collector Emitter Voltage V(br)ceo
100V
Power Dissipation Pd
3W
Dc Collector Current
6A
Dc Current Gain Hfe
200
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FZT953TA
Manufacturer:
ZETEX
Quantity:
3 300
Company:
Part Number:
FZT953TA
Manufacturer:
ZETEX
Quantity:
8 456
Part Number:
FZT953TA
Manufacturer:
ZETEX
Quantity:
20 000
ELECTRICAL CHARACTERISTICS (at T
* Measured under pulsed conditions. Pulse width =300
Spice parameter data is available upon request for this device
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer Ratio
Transition Frequency
Output Capacitance
Switching Times
FZT951
SYMBOL
V
V
V
V
I
I
R
I
V
V
V
h
f
C
t
t
CBO
CER
EBO
T
on
off
FE
(BR)CBO
(BR)CER
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
1 k
MIN.
-100
-100
-60
-6
100
100
75
10
3 - 280
amb
= 25°C unless otherwise stated)
TYP.
-140
-140
-90
-8
-20
-85
-155
-370
-1080
-935
200
200
90
25
120
74
82
350
s . duty cycle
MAX.
-50
-1
-50
-1
-10
-50
-140
-210
-460
-1240
-1070
300
2%
UNIT
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
MHz
pF
ns
ns
A
A
CONDITIONS.
I
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
I
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
B2
=-100
CB
CB
CB
CB
EB
CB
=-100
=-10mA*
=-100mA, I
=-1A, I
=-2A, I
=-5A, I
=-5A, I
=-10mA, V
=-2A, V
=-5A, V
=-10A, V
=-100mA, V
=-2A, I
=-1
=-5A, V
=200mA, V
=-6V
=-80V
=-80V, T
=-80V
=-80V, T
=-10V, f=1MHz
A , RB
B
B
B
B
B1
A
A
CE
CE
=-100mA*
=-200mA*
=-500mA*
=-500mA*
CE
=-200mA
CE
=-1V*
=-1V*
=-1V*
amb
amb
=-1V*
CE
B
CE
1 k
=-10mA*
CC
=-1V*
=100°C
=100°C
=-10V
=-10V