FZT953TA Diodes Inc, FZT953TA Datasheet - Page 4
FZT953TA
Manufacturer Part Number
FZT953TA
Description
Bipolar Power PNP HighCt Low Sat
Manufacturer
Diodes Inc
Datasheet
1.FZT951.pdf
(5 pages)
Specifications of FZT953TA
Maximum Operating Frequency
125 MHz
Minimum Operating Temperature
- 55 C
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Package / Case
SOT-223
Collector- Emitter Voltage Vceo Max
100 V
Emitter- Base Voltage Vebo
- 6 V
Maximum Dc Collector Current
5 A
Power Dissipation
3 W
Maximum Operating Temperature
+ 150 C
Collector Emitter Voltage V(br)ceo
100V
Power Dissipation Pd
3W
Dc Collector Current
6A
Dc Current Gain Hfe
200
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FZT953TA
Manufacturer:
ZETEX
Quantity:
3 300
Company:
Part Number:
FZT953TA
Manufacturer:
ZETEX
Quantity:
8 456
Part Number:
FZT953TA
Manufacturer:
ZETEX
Quantity:
20 000
ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for this device
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
Transition Frequency
Output Capacitance
Switching Times
FZT953
SYMBOL
V
V
V
V
I
I
R
I
V
V
V
h
f
C
t
t
CBO
CER
EBO
T
on
off
FE
(BR)CBO
(BR)CER
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
1 k
MIN.
-140
-140
-100
-6
100
100
50
30
3 - 282
amb
= 25°C unless otherwise stated)
TYP.
-170
-170
-120
-8
-20
-90
-160
-300
-1010
-925
200
200
90
50
15
125
65
110
460
s . Duty cycle
MAX.
-50
-1
-50
-1
-10
-50
-115
-220
-420
-1170
-1160
300
2 %
UNIT
V
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
MHz
pF
ns
ns
A
A
CONDITIONS.
I
I
I
I
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
I
C
C
C
E
C
C
C
C
C
C
C
C
C
C
C
C
C
B2
CB
CB
CB
CB
EB
CB
=-100
=-10mA*
=-100
=-100mA, I
=-1A, I
=-2A, I
=-4A, I
=-4A, I
=-10mA, V
=-1A, V
=-3A, V
=-4A, V
=-10A, V
=-100mA, V
=-2A, I
=-1
=-4A, V
=200mA, V
=-6V
=-100V
=-100V, T
=-100V
=-100V, T
=-10V, f=1MHz
A , RB
B
B
B
B
B1
A
A
CE
CE
CE
=-100mA*
=-200mA*
=-400mA*
=-400mA*
CE
=-200mA
CE
=-1V*
=-1V*
=-1V*
=-1V*
=-1V*
CE
B
amb
amb
1 k
=-10mA*
CE
CC
=-1V*
=-10V
=-10V
=100°C
=100°C