BC846BM3T5G ON Semiconductor, BC846BM3T5G Datasheet - Page 3

• Manufacturer Part Number: BC846BM3T5G
• Description: Bipolar Small Signal 100mA 80V NPN
• Manufacturer: ON Semiconductor

Specifications of BC846BM3T5G

• Dc Collector/base Gain Hfe Min: 150 at 10 uA at 5 V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: SOT-723-3
• Collector- Emitter Voltage Vceo Max: 65 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: 0.1 A
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 265 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1.5
1.0
0.8
0.6
0.4
0.3
2.0
1.6
1.2
0.8
0.4
7.0
5.0
3.0
2.0
2.0
0.2
1.0
10
0
0.02
0.2
0.4 0.6
Figure 1. Normalized DC Current Gain
0.5
Figure 3. Collector Saturation Region
10 mA
I
0.8
C
=
I
1.0
C
V
1.0
, COLLECTOR CURRENT (mAdc)
R
20 mA
, REVERSE VOLTAGE (VOLTS)
I
C
Figure 5. Capacitances
I
0.1
B
=
, BASE CURRENT (mA)
2.0
2.0
I
C
C
= 50 mA
ib
5.0
4.0
C
10
ob
6.0
1.0
T
8.0
A
20
I
C
= 25°C
10
= 100 mA
I
TYPICAL CHARACTERISTICS
C
= 200 mA
V
T
A
50
T
CE
A
= 25°C
20
= 25°C
= 10 V
100
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10
200
20
40
3
400
300
200
100
80
60
40
30
20
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.0
1.2
1.6
2.0
2.4
2.8
0.5
0
0.1
0.2
Figure 4. Base−Emitter Temperature Coefficient
Figure 6. Current−Gain − Bandwidth Product
T
0.7 1.0
A
-55°C to +125°C
Figure 2. “Saturation” and “On” Voltages
= 25°C
0.2
0.3
I
C
I
C
, COLLECTOR CURRENT (mAdc)
I
0.5
C
, COLLECTOR CURRENT (mAdc)
V
, COLLECTOR CURRENT (mA)
BE(sat)
2.0
0.7
1.0
1.0
@ I
3.0
V
CE(sat)
C
/I
2.0
B
5.0
= 10
V
3.0
@ I
BE(on)
7.0
C
5.0
/I
B
@ V
= 10
7.0
10
10
CE
10
= 10 V
20
20
V
T
A
CE
30
= 25°C
= 10 V
30
50
70
50
100
100