BC846BM3T5G ON Semiconductor, BC846BM3T5G Datasheet - Page 4
![Bipolar Small Signal 100mA 80V NPN](/photos/16/8/160811/sc703_sml.jpg)
BC846BM3T5G
Manufacturer Part Number
BC846BM3T5G
Description
Bipolar Small Signal 100mA 80V NPN
Manufacturer
ON Semiconductor
Datasheet
1.BC846BM3T5G.pdf
(5 pages)
Specifications of BC846BM3T5G
Dc Collector/base Gain Hfe Min
150 at 10 uA at 5 V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Package / Case
SOT-723-3
Collector- Emitter Voltage Vceo Max
65 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.1 A
Maximum Dc Collector Current
0.1 A
Power Dissipation
265 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BC846BM3T5G
Manufacturer:
ON Semiconductor
Quantity:
26 910
Company:
Part Number:
BC846BM3T5G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BC846BM3T5G
Manufacturer:
ON/安森美
Quantity:
20 000
2.0
1.0
0.5
0.2
2.0
1.6
1.2
0.8
0.4
6.0
4.0
2.0
40
20
10
0
0.1
0.02
0.1
0.2
V
T
0.2
A
CE
0.05
Figure 9. Collector Saturation Region
= 25°C
= 5 V
V
20 mA
I
0.5
0.1
C
R
1.0
Figure 7. DC Current Gain
, COLLECTOR CURRENT (mA)
, REVERSE VOLTAGE (VOLTS)
10 mA
Figure 11. Capacitance
I
I
B
C
, BASE CURRENT (mA)
1.0
0.2
=
50 mA
2.0
0.5
C
10
ib
C
5.0
100 mA
1.0
ob
2.0
10
TYPICAL CHARACTERISTICS
100
20
T
A
5.0
200 mA
= 25°C
T
A
= 25°C
http://onsemi.com
50
10
100
20
4
-1.0
-1.4
-1.8
-2.2
-2.6
-3.0
1.0
0.8
0.6
0.4
0.2
500
200
100
0
50
20
0.2
0.2
Figure 10. Base−Emitter Temperature Coefficient
Figure 12. Current−Gain − Bandwidth Product
V
V
V
V
T
T
A
A
BE(sat)
BE
CE(sat)
CE
0.5
0.5
= 25°C
= 25°C
@ V
= 5 V
q
@ I
VB
@ I
I
I
CE
1.0
1.0
C
C
I
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
for V
C
C
C
= 5.0 V
Figure 8. “On” Voltage
1.0
/I
/I
, COLLECTOR CURRENT (mA)
B
B
BE
= 10
2.0
2.0
= 10
5.0
5.0
5.0
10
-55°C to 125°C
10
10
20
20
50 100
50
50
100
100
200
200