HN7G05FU(TE85L,F) Toshiba, HN7G05FU(TE85L,F) Datasheet - Page 2

• Manufacturer Part Number: HN7G05FU(TE85L,F)
• Description: Bipolar Small Signal Vceo=-50V Vds=20V Ic=-100ma Id=50mA
• Manufacturer: Toshiba

Specifications of HN7G05FU(TE85L,F)

• Dc Collector/base Gain Hfe Min: 30
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Package / Case: 2-2J1E
• Collector- Emitter Voltage Vceo Max: - 50 V
• Emitter- Base Voltage Vebo: - 10 V
• Continuous Collector Current: - 100 mA
• Power Dissipation: 200 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Q1
Q2
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Input resistor
Resistor ratio
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
(
(MOSFET)
Transistor
Characteristic
Characteristic
Electrical Characteristics
)
Electrical Characteristics
V
R
V
Symbol
V
Symbol
V
R1/R2
(BR) DSS
CE (sat)
DS (ON)
⎪Y
I
I
I
I
I
I(OFF)
h
CBO
CEO
EBO
GSS
DSS
I(ON)
V
R1
FE
th
fs
⎪
V
V
V
V
I
V
V
V
I
V
V
V
I
(Ta = 25°C)
C
D
D
CB
CE
EB
CE
CE
CE
GS
DS
DS
DS
= −5 mA, I
= 100 μA, V
= 10 mA V
(Ta = 25°C)
2
= −5 V, I
= −50 V, I
= −50 V, I
= −5 V, I
= −0.2 V, I
= −5 V, I
= 20 V, V
= 3 V, I
= 3 V, I
= 10 V, V
Test Condition
Test Condition
D
D
B
C
GS
C
C
GS
= 0.1 mA
= 10 mA
DS
E
E
GS
= −0.25 mA
C
= 0
= −10 mA
= −0.1 mA
= 0
= 0
= 2.5 V
= −5 mA
⎯
⎯
= 0
= 0
= 0
−0.82
−1.1
−1.0
3.29
Min
Min
0.9
0.5
30
20
20
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
−0.1
Typ.
4.7
1.0
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
HN7G05FU
2007-11-01
−1.52
−100
−500
−0.3
−2.0
−1.5
6.11
Max
Max
1.1
1.5
40
⎯
⎯
⎯
1
1
Unit
Unit
mA
mS
kΩ
nA
nA
μA
μA
Ω
V
V
V
V
V