2SA1313YT5LFT Toshiba, 2SA1313YT5LFT Datasheet - Page 2

• Manufacturer Part Number: 2SA1313YT5LFT
• Description: Bipolar Small Signal SM SIG POWER TRANS
• Manufacturer: Toshiba

Specifications of 2SA1313YT5LFT

• Dc Collector/base Gain Hfe Min: 25
• Gain Bandwidth Product Ft: 200 MHz
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Package / Case: TO-236MOD
• Collector- Emitter Voltage Vceo Max: - 50 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 500 mA
• Power Dissipation: 200 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Note: h
h
FE (1)
FE (2)
Characteristics
classification O: 70~140, Y: 120~240
classification O: 25 (min), Y: 40 (min)
(Ta = 25°C)
V
Symbol
h
h
CE (sat)
I
I
FE (1)
FE (2)
V
CBO
EBO
C
f
BE
T
ob
(Note)
(Note)
V
V
V
V
I
V
V
V
C
CB
EB
CE
CE
CE
CE
CB
= −100 mA, I
= −50 V, I
= −5 V, I
= −1 V, I
= −6 V, I
= −1 V, I
= −6 V, I
= −6 V, I
2
Test Condition
C
C
C
C
C
E
E
= 0
= 0, f = 1 MHz
= −100 mA
= −400 mA
= −100 mA
= −20 mA
B
= 0
= −10 mA
Min
70
25
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
−0.1
−0.8
200
13
⎯
⎯
⎯
⎯
2007-11-01
−0.25
2SA1313
−0.1
−0.1
−1.0
Max
240
⎯
⎯
⎯
MHz
Unit
μA
μA
pF
V
V