ZXT12N50DXTA Diodes Inc, ZXT12N50DXTA Datasheet - Page 2

• Manufacturer Part Number: ZXT12N50DXTA
• Description: Bipolar Small Signal Dual 50V NPN
• Manufacturer: Diodes Inc

Specifications of ZXT12N50DXTA

• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: PNP/PNP
• Mounting Style: SMD/SMT
• Package / Case: MSOP-8
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 7.5 V
• Continuous Collector Current: 3 A
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 0.87 W
• Maximum Operating Frequency: 132 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 1 - MARCH 2000
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
PARAMETER
Junction to Ambient (a)(d)
Junction to Ambient (b)(d)
Junction to Ambient (a)(e)
SYMBOL
V
V
V
I
I
I
P
P
P
T
CM
C
B
D
D
D
j
CBO
CEO
EBO
:T
2
stg
SYMBOL
R
R
R
JA
JA
JA
-55 to +150
LIMIT
0.87
1.04
1.25
100
500
7.5
6.9
8.3
50
10
10
3
VALUE
ZXT12N50DX
143
100
120
mW/°C
mW/°C
mW/°C
UNIT
mA
°C
W
W
W
V
V
V
A
A
UNIT
°C/W
°C/W
°C/W