ZXT12N50DXTA Diodes Inc, ZXT12N50DXTA Datasheet - Page 4

• Manufacturer Part Number: ZXT12N50DXTA
• Description: Bipolar Small Signal Dual 50V NPN
• Manufacturer: Diodes Inc

Specifications of ZXT12N50DXTA

• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: PNP/PNP
• Mounting Style: SMD/SMT
• Package / Case: MSOP-8
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 7.5 V
• Continuous Collector Current: 3 A
• Maximum Dc Collector Current: 3 A
• Power Dissipation: 0.87 W
• Maximum Operating Frequency: 132 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (at T
*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
ISSUE 1 - MARCH 2000
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
SYMBOL
V
V
V
I
I
I
V
V
V
h
f
C
t
t
CBO
EBO
CES
T
(on)
(off)
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
BE(on)
obo
amb
MIN.
100
50
7.5
250
300
150
= 25°C unless otherwise stated).
50
4
TYP.
200
65
8.5
190
135
400
450
250
100
132
1000
11
95
26
115
0.9
0.83
2%
MAX.
100
100
100
120
250
175
0.95
0.9
900
13
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
V
V
MHz
pF
ns
ns
ZXT12N50DX
CONDITIONS.
I
I
I
V
V
V
I
I
I
I
I
I
I
I
I
I
I
f=50MHz
V
I
C
C
E
C
C
C
C
C
C
C
C
C
C
C
V
B1
CB
EB
CES
CB
=100 A
=100 A
=10mA*
=0.1A, I
=1A, I
=3A, I
=3A, I
=3A, I
=3A, V
=10mA, V
=1A, V
=3A, V
=5A, V
=50mA, V
CC
=I
=80V
=6V
=10V, f=1MHz
=10V, I
B2
=80V
=20mA
B
B
B
B
CE
CE
CE
CE
=10mA*
=50mA*
=300mA*
=50mA*
B
=10mA*
=2V*
=2V*
=2V*
=2V*
C
CE
CE
=1A
=2V*
=10V