2SC4686A(Q) Toshiba, 2SC4686A(Q) Datasheet - Page 3

• Manufacturer Part Number: 2SC4686A(Q)
• Description: Bipolar Small Signal NPN Transistor 220NIS1 PLS PLNN AC
• Manufacturer: Toshiba

Specifications of 2SC4686A(Q)

• Dc Collector/base Gain Hfe Min: 15
• Gain Bandwidth Product Ft: 5.5 MHz
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Package / Case: SC-67
• Collector- Emitter Voltage Vceo Max: 1200 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 50 mA
• Maximum Dc Collector Current: 100 mA
• Power Dissipation: 10 W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

100
0.5
0.3
0.1
50
40
30
20
10
50
30
10
80
60
40
20
0
5
3
1
0
0.1
0
0
10
Common emitter
I C /I B = 5
Common emitter
V CE = 50 V
0.3 0.5
0.2
Collector-emitter voltage V
4
Tc = −25°C
Base-emitter voltage V
Collector current I
1
9
Tc = 100°C
0.4
8
V
CE (sat)
I
I
C
3
C
8
– V
– V
0.6
12
5
CE
BE
10
– I
25
25
C
Common emitter
Tc = 25°C
C
0.8
16
BE
(mA)
7
30 50 100
CE
100
−25
(V)
I B = 1 mA
(V)
1.0
20
6
5
4
3
2
300
1.2
24
3
100
100
0.5
0.3
0.1
50
30
10
10
50
30
10
5
3
1
5
3
1
5
3
1
0.1
0.1
1
Common emitter
V CE = 5 V
0.3 0.5
0.3 0.5
Collector-base voltage V
3
Collector current I
Collector current I
5
Tc = 100°C
1
1
V
10
C
−25
BE (sat)
h
25
ob
FE
2SC4686,2SC4686A
3
3
– V
– I
– I
CB
C
5
5
30
C
C
C
Common emitter
I C /I B = 5
10
10
100
50
(mA)
(mA)
CB
Tc = −25°C
100
(V)
30 50
30 50
25
2004-07-26
100
100
300