HN7G01FE-A(TE85L,F Toshiba, HN7G01FE-A(TE85L,F Datasheet - Page 2

• Manufacturer Part Number: HN7G01FE-A(TE85L,F
• Description: Bipolar Small Signal Vceo=-12V Vds=20V Ic=-400mA Id=50mA
• Manufacturer: Toshiba

Specifications of HN7G01FE-A(TE85L,F

• Dc Collector/base Gain Hfe Min: 300
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Package / Case: 2-2N1F
• Collector- Emitter Voltage Vceo Max: - 12 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 400 mA
• Power Dissipation: 100 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Q1
Q2
Switching Time Test Circuit
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Note 2: h
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
(a) Switching time test circuit
(Transistor)
(MOSFET)
2.5 V
0
10 μS
V
FE
Characteristic
Characteristic
IN
classification A: 300~600, B: 500~1000
Electrical Characteristics
IN
Electrical Characteristics
Turn-on time
Turn-off time
I
D
V
DD
OUT
V
V
h
V
R
CE (sat) (1)
CE (sat) (2)
V
FE
Symbol
Symbol
(BR) DSS
DS (ON)
BE (sat)
⎪Y
I
I
I
I
C
C
C
CBO
EBO
GSS
DSS
V
t
t
(Note 2) V
oss
on
off
rss
iss
V
D.U. < = 1%
V
(Z
Common source
Ta = 25°C
th
fs
DD
IN
⎪
out
: t
= 3 V
r
= 50 Ω)
, t
f
V
V
I
I
I
V
I
V
V
V
I
V
V
V
V
V
< 5 ns
C
C
C
D
D
CB
EB
CE
GS
DS
DS
DS
DS
DS
DS
DD
DD
= −10 mA, I
= −200 mA, I
= −200 mA, I
= 100 μA, V
= 10 mA, V
(Ta = 25°C)
= −15 V, I
= −5 V, I
= −2 V, I
= 20 V, V
= 3 V, I
= 3 V, I
= 3 V, V
= 3 V, V
= 3 V, V
= 10 V, V
= 3 V, I
= 3 V, I
(Ta = 25°C)
2
D
D
D
D
Test Condition
Test Condition
GS
GS
GS
C
C
(c) V
(b) V
GS
= 0.1 mA
= 10 mA
B
DS
GS
= 10 mA, V
= 10 mA, V
E
GS
= 0
= −10 mA
B
B
= −0.5 mA
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= −10 mA
= −10 mA
= 2.5 V
V
V
= 0
= 0
= 0
OUT
IN
GS
DS
GS
GS
= 0~2.5 V
= 0~2.5 V
V
DS (ON)
2.5 V
V
DD
0
300
Min
Min
0.7
20
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
on
10%
t
90%
r
−0.87
−110
Typ.
Typ.
11.0
0.16
0.19
−15
3.3
9.3
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
4
t
HN7G01FE
90%
off
2007-11-01
1000
−250
−0.1
−0.1
−1.2
Max
Max
−30
1.3
12
t
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1
1
f
10%
Unit
Unit
mV
mS
μA
μA
μA
μA
pF
pF
pF
μs
Ω
V
V
V