SIR460DP-T1-GE3 Vishay, SIR460DP-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIR460DP-T1-GE3
• Description: MOSFET Power 30V 40A 48W
• Manufacturer: Vishay

Specifications of SIR460DP-T1-GE3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0047 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 60 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 24.3 A
• Power Dissipation: 5000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: PowerPAK SO
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69095
S09-0140-Rev. A, 02-Feb-09
0.0060
0.0055
0.0050
0.0045
0.0040
0.0035
70
56
42
28
14
10
On-Resistance vs. Drain Current and Gate Voltage
0
8
6
4
2
0
0.0
0
0
I
D
= 10 A
0.5
V
14
V
8
V
GS
DS
DS
Output Characteristics
Q
= 10 thru 4 V
g
- Drain-to-Source Voltage (V)
V
= 15 V
GS
- Total Gate Charge (nC)
V
I
D
GS
V
Gate Charge
= 4.5 V
- Drain Current (A)
1.0
DS
28
16
= 10 V
= 10 V
V
1.5
24
42
DS
= 20 V
V
GS
= 3 V
2.0
56
32
New Product
2.5
70
40
2800
2240
1680
1120
560
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
8
6
4
2
0
0
- 50
0
0
C
I
On-Resistance vs. Junction Temperature
D
rss
- 25
= 15 A
T
C
T
C
= 125 °C
1
6
= 25 °C
V
V
Transfer Characteristics
GS
DS
0
T
C
J
oss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
Capacitance
25
12
2
C
50
iss
Vishay Siliconix
T
C
= - 55 °C
V
18
3
GS
75
SiR460DP
V
= 10 V
GS
100
www.vishay.com
= 4.5 V
24
4
125
150
30
5
3