SIR460DP-T1-GE3 Vishay, SIR460DP-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SIR460DP-T1-GE3
• Description: MOSFET Power 30V 40A 48W
• Manufacturer: Vishay

Specifications of SIR460DP-T1-GE3

• Transistor Polarity: N-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.0047 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 60 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 24.3 A
• Power Dissipation: 5000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 3.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: PowerPAK SO
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SiR460DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69095.
www.vishay.com
6
0.01
0.01
0.1
0.1
1
1
10
10
-4
-4
0.2
0.1
Duty Cycle = 0.5
0.02
Duty Cycle = 0.5
0.05
0.1
0.2
Single Pulse
10
0.02
-3
0.05
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
Single Pulse
10
-2
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
10
-2
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
P
DM
-1
JM
- T
t
A
1
S09-0140-Rev. A, 02-Feb-09
= P
t
2
Document Number: 69095
DM
100
Z
thJA
thJA
t
t
1
2
(t)
= 65 °C/W
1000
1