SI7114ADN-T1-GE3 Vishay, SI7114ADN-T1-GE3 Datasheet

MOSFET Power 30V 35A 39W

SI7114ADN-T1-GE3

Manufacturer Part Number
SI7114ADN-T1-GE3
Description
MOSFET Power 30V 35A 39W
Manufacturer
Vishay

Specifications of SI7114ADN-T1-GE3

Transistor Polarity
N-Channel
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0075 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
50 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18 A
Power Dissipation
3700 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK 1212
Continuous Drain Current Id
18.3A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
10mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7114ADN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7114ADN-T1-GE3
Quantity:
850
Company:
Part Number:
SI7114ADN-T1-GE3
Quantity:
30 000
Company:
Part Number:
SI7114ADN-T1-GE3
Quantity:
70 000
Document Number: 68932
S-82616-Rev. B, 03-Nov-08
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
g. Package limited.
Ordering Information: Si7114ADN-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
DS
30
(V)
8
3.30 mm
D
7
D
C
= 25 °C.
0.0098 at V
6
0.0075 at V
D
PowerPAK
Bottom View
5
R
http://www.vishay.com/ppg?73257
D
DS(on)
GS
GS
1
J
(Ω)
®
S
= 4.5 V
= 150 °C)
= 10 V
b, f
1212-8
2
S
N-Channel 30-V (D-S) MOSFET
3
S
3.30 mm
4
I
D
G
(A)
35
35
Steady State
a, g
d, e
t ≤ 10 s
T
T
T
T
L = 0.1 mH
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Q
= 25 °C, unless otherwise noted
10.2 nC
g
(Typ.)
New Product
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
AS
I
DS
GS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free
• TrenchFET
• 100 % R
• Synchronous Rectification
100 % UIS Tested
Typical
2.4
26
g
Tested
®
Power MOSFET
G
- 55 to 150
N-Channel MOSFET
14.5
3.2
3.7
2.4
Limit
18
± 20
35
260
35
30
60
30
45
32
39
25
b, c
b, c
b, c
b, c
g
b, c
g
D
S
Maximum
3.2
34
Vishay Siliconix
Si7114ADN
www.vishay.com
°C/W
Unit
Unit
RoHS
COMPLIANT
mJ
°C
W
V
A
A
1

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SI7114ADN-T1-GE3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7114ADN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7114ADN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance ...

Page 3

... Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage Total Gate Charge (nC) g Gate Charge Document Number: 68932 S-82616-Rev. B, 03-Nov- 100 Si7114ADN Vishay Siliconix ° ° 125 ° 0.0 0.6 1.2 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 1600 C iss 1200 800 400 C oss C rss ...

Page 4

... Si7114ADN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 2.3 2 250 µA D 1.7 1.4 1.1 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.020 0.015 0.010 °C J 0.005 0.000 0.9 1.2 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 68932 S-82616-Rev. B, 03-Nov-08 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) Si7114ADN Vishay Siliconix 2.0 1.5 1.0 0.5 0 ...

Page 6

... Si7114ADN Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.001 - Duty Cycle = 0.5 0.2 0.1 0.02 Single Pulse 0 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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