FDD86102 Fairchild Semiconductor, FDD86102 Datasheet - Page 5

• Manufacturer Part Number: FDD86102
• Description: MOSFET Power 100V N-Channel PowerTrench
• Manufacturer: Fairchild Semiconductor

Specifications of FDD86102

• Gate Charge Qg: 13.4 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 19 mOhms
• Forward Transconductance Gfs (max / Min): 21 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 8 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDD86102 Rev.C2
Typical Characteristics
0.01
0.1
2
1
10
-5
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 13. Junction-to-Case Transient Thermal Response Curve
SINGLE PULSE
R
θ
JC
10
= 2
-4
T
J
o
= 25 °C unless otherwise noted
C/W
10
-3
5
10
-2
NOTES:
DUTY FACTOR: D = t
PEAK T
J
= P
DM
10
x Z
-1
P
θJC
DM
1
/t
x R
2
θJC
t
1
+ T
t
2
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C
1