SiHF16N50C-E3 Vishay, SiHF16N50C-E3 Datasheet - Page 4

MOSFET Power N-Channel 500V

SiHF16N50C-E3

Manufacturer Part Number
SiHF16N50C-E3
Description
MOSFET Power N-Channel 500V
Manufacturer
Vishay
Datasheet

Specifications of SiHF16N50C-E3

Transistor Polarity
N-Channel
Gate Charge Qg
68 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Forward Transconductance Gfs (max / Min)
3 S
Drain-source Breakdown Voltage
500 V
Continuous Drain Current
16 A
Power Dissipation
38 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-220
Drain Source Voltage Vds
500V
On Resistance Rds(on)
0.31ohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
30V
Operating Temperature Range
-55°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SIHF16N50C-E3
Quantity:
70 000
SiHP16N50C, SiHB16N50C, SiHF16N50C
Vishay Siliconix
www.vishay.com
4
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
2400
1200
2800
2000
1600
800
400
24
20
16
12
0
8
4
0
1
0
I
D
C
= 16 A
rss
V
DS
Q
, Drain-to-Source Voltage (V)
20
G
, Total Gate Charge (nC)
10
V
C
C
C
C
GS
iss
rss
oss
oss
= 0 V, f = 1MHz
= C
= C
= C
40
ds
gs
gd
V
V
V
Fig. 9 - Maximum Safe Operating Area (TO-220 FULLPAK)
DS
DS
+ C
DS
+C
= 400 V
= 250 V
= 100 V
100
gd
gd
C
C
100
ds
60
0.1
10
iss
1
SHORTED
10
T
T
Single Pulse
C
J
= 150 °C
1000
= 25 °C
OPERATION IN THIS AREA
V
80
DS
, Drain-to-Source Voltage (V)
LIMITED BY R
100
DS(on)
Fig. 8 - Maximum Safe Operating Area (TO-220AB, D
Fig. 7 - Typical Source-Drain Diode Forward Voltage
100
100
0.1
10
0.1
10
1
1
10
0.2
10 ms
1 ms
100 µs
T
T
Single Pulse
T
T
Single Pulse
T
T
Single Pulse
T
T
Single Pulse
C
J
C
J
C
J
C
J
1000
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
T
= 25 °C
= 150 °C
= 25 °C
OPERATION IN THIS AREA
J
V
0.4
V
= 150 °C
SD
DS
LIMITED BY R
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
0.6
0.8
100
T
J
DS(on)
S10-0811-Rev. A, 12-Apr-10
= 25 °C
Document Number: 91401
1
V
1.2
GS
= 0 V
1.4
10 ms
1 ms
100 µs
1000
2
1.6
PAK)

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