SiHF16N50C-E3 Vishay, SiHF16N50C-E3 Datasheet - Page 7

• Manufacturer Part Number: SiHF16N50C-E3
• Description: MOSFET Power N-Channel 500V
• Manufacturer: Vishay

Specifications of SiHF16N50C-E3

• Transistor Polarity: N-Channel
• Gate Charge Qg: 68 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Forward Transconductance Gfs (max / Min): 3 S
• Drain-source Breakdown Voltage: 500 V
• Continuous Drain Current: 16 A
• Power Dissipation: 38 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 0.31ohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 30V
• Operating Temperature Range: -55°C To +150°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91401.
Document Number: 91401
S10-0811-Rev. A, 12-Apr-10
Re-applied
voltage
Reverse
recovery
current
+
-
R
D.U.T.
G
*
Driver gate drive
D.U.T. I
D.U.T. V
Inductor current
V
GS
= 5 V for logic level devices
P.W.
SD
DS
waveform
waveform
SiHP16N50C, SiHB16N50C, SiHF16N50C
Fig. 15 - For N-Channel
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode
Period
Body diode forward
+
-
• dV/dt controlled by R
• Driver same type as D.U.T.
• I
• D.U.T. - device under test
SD
Diode recovery
current
controlled by duty factor "D"
Circuit layout considerations
dV/dt
forward drop
• Low stray inductance
• Ground plane
• Low leakage inductance
dI/dt
current transformer
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
= 10 V*
+
-
V
DD
Vishay Siliconix
www.vishay.com
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