BSZ340N08NS3 G Infineon Technologies, BSZ340N08NS3 G Datasheet - Page 5

• Manufacturer Part Number: BSZ340N08NS3 G
• Description: MOSFET Power N-KANAL POWER MOS
• Manufacturer: Infineon Technologies

Specifications of BSZ340N08NS3 G

• Gate Charge Qg: 9.1 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.034 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 16 S, 8 S
• Drain-source Breakdown Voltage: 80 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 2100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TSDSON
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSZ340N08NS3GXT