ZXMN6A11GTA Diodes Inc, ZXMN6A11GTA Datasheet - Page 3

• Manufacturer Part Number: ZXMN6A11GTA
• Description: MOSFET Power 60V N-Chnl UMOS
• Manufacturer: Diodes Inc

Specifications of ZXMN6A11GTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.12 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 3900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 4.6 ns
• Rise Time: 3.5 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
100m
10m
10
60
50
40
30
20
10
100µ
0
1
Transient Thermal Impedance
R
Limited
25mm x 25mm
25mm x 25mm
DS(on)
D=0.5
D=0.2
T
T
1oz FR4
1oz FR4
1m
V
amb
amb
Safe Operating Area
DC
DS
=25°C
=25°C
1
1s
Drain-Source Voltage (V)
10m 100m
Pulse Width (s)
100ms
10ms
D=0.1
1
1ms
10
D=0.05
100µs
10
Single Pulse
100
www.diodes.com
1k
3 of 8
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
100
10
100µ
1
0
20
Pulse Power Dissipation
1m
40
Temperature (°C)
10m 100m
Derating Curve
Diodes Incorporated
Pulse Width (s)
A Product Line of
60
80
1
100 120 140 160
25mm x 25mm
25mm x 25mm
Single Pulse
10
T
1oz FR4
1oz FR4
amb
=25°C
ZXMN6A11G
100
© Diodes Incorporated
1k
October 2010