ZXMN6A11GTA Diodes Inc, ZXMN6A11GTA Datasheet - Page 6

• Manufacturer Part Number: ZXMN6A11GTA
• Description: MOSFET Power 60V N-Chnl UMOS
• Manufacturer: Diodes Inc

Specifications of ZXMN6A11GTA

• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.12 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 3900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-223
• Fall Time: 4.6 ns
• Rise Time: 3.5 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics - continued
Test Circuit
ZXMN6A11G
Document number: DS33556 Rev. 5 - 2
90%
10%
V
V
DS
GS
V
Capacitance v Drain-Source Voltage
G
500
400
300
200
100
0
Q
GS
t
Basic gate charge waveform
d(on)
Switching time waveforms
V
DS
1
t
(on)
- Drain - Source Voltage (V)
t
r
C
ISS
Q
Q
G
GD
C
OSS
Charge
C
RSS
t
d(off)
10
t
(on)
t
V
f = 1MHz
r
GS
= 0V
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6 of 8
Gate-Source Voltage v Gate Charge
10
8
6
4
2
0
0
Switching time test circuit
I
D
Gate charge test circuit
= 2.5A
1
12V
R
G
Diodes Incorporated
Q - Charge (nC)
A Product Line of
2
V
regulator
Current
GS
50k
I
G
V
3
GS
R
Same as
D.U.T
D
4
D.U.T
V
DS
V
= 30V
ZXMN6A11G
DS
5
I
V
D
© Diodes Incorporated
DS
October 2010
V
6
DD