ZXMN20B28KTC Diodes Inc, ZXMN20B28KTC Datasheet - Page 2

• Manufacturer Part Number: ZXMN20B28KTC
• Description: MOSFET Power ENHANCE MODE MOSFET 200V N-CHANNEL
• Manufacturer: Diodes Inc

Specifications of ZXMN20B28KTC

• Gate Charge Qg: 8.1 nC
• Minimum Operating Temperature: - 55 C
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 750 mOhms
• Forward Transconductance Gfs (max / Min): 6.13 S
• Drain-source Breakdown Voltage: 200 V
• Continuous Drain Current: 2.3 A
• Power Dissipation: 4.3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal Characteristics
Maximum Ratings
Drain-Source voltage
Gate-Source voltage
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
Repetitive Avalanche Energy
Repetitive Avalanche Current
Continuous Drain current
Pulsed Drain current
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
Notes:
ZXMN20B28K
Document Number DS31984 Rev. 2 - 2
2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
3. Same as note 2, except the device is measured at t ≤ 10 sec.
4. Same as note 2, except the device is operating in a repetitive state with pulse width and duty cycle limited by maximum junction temperature.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with the high coverage single sided 1oz copper, in still air conditions; the device is
7. UIS in production with L = 4.83mH, I
measured when operating in a steady-state condition.
measured when operating in a steady-state condition.
Characteristic
Characteristic
@T
V
V
A
GS
GS
= 25°C unless otherwise specified
= 10V
= 10V
AS
(Note 7)
(Note 7)
(Note 4)
(Note 4)
(Note 3)
T
(Note 2)
(Note 4)
(Note 2)
(Note 4)
(Note 2)
(Note 3)
(Note 6)
(Note 2)
(Note 3)
(Note 6)
(Note 5)
= 5.5A, R
A
= 70°C (Note 3)
G
= 25Ω, V
www.diodes.com
DD
= 100V, starting T
2 of 8
Symbol
Symbol
T
J
V
R
R
V
, T
E
E
I
I
I
I
P
DSS
I
DM
I
SM
AS
AR
θ JA
θ JL
GS
AS
AR
D
S
D
STG
J
= 25°C.
Diodes Incorporated
A Product Line of
-55 to 150
Value
Value
17.3
17.3
34.4
10.2
76.0
17.4
29.1
12.3
57.3
1.15
200
±20
5.5
4.5
5.5
2.3
1.8
1.5
5.7
4.3
2.2
73
ZXMN20B28K
mW/°C
© Diodes Incorporated
°C/W
°C/W
Unit
Unit
mJ
mJ
°C
W
V
V
A
A
A
A
A
A
October 2009